Pradeep R. Varadwaj*, Arpita Varadwaj, Helder M. Marques and Koichi Yamashita,
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引用次数: 0
摘要
本文重温了 "卤素键的定义(IUPAC 建议 2013)" [Desiraju, G. R. Pure Appl.[Desiraju, G. R. Pure Appl. Chem. 2013, 85 (8), 1711-1713],这些建议没有包含伴随卤素键形成的(亲电)σ- 孔和 p-/π 孔理论以及基于轨道的电荷转移相互作用的基本概念。亲电 σ 孔或 p-/π 孔是指在分子实体中沿着或正交于共价键卤素一侧的静电表面上具有正极性(和正电位)的电子密度不足区域,当它靠近与之相互作用的同一或另一相同或不同分子实体上的电子密度丰富的亲核区域时,会导致非共价相互作用--卤素键--的形成。本文重新审视了卤素键的特征,并列出了参与卤素键的各种供体和受体。我们还补充了一些注意事项,这些注意事项对于识别化学体系中的卤素键至关重要,也是正确使用相关术语的必要条件。我们举例说明了晶体相中分子间和分子内卤素键及其他非共价相互作用的化学体系,并利用第一原理计算对一些二聚体系进行了案例研究。我们还指出,卤代分子中的卤素衍生物表面可能形成的 π 孔/带(或 p 孔/带)在靠近另一个类似或不同分子实体上的亲核物时,可能容易形成 π 孔/带(或 p 孔/带)卤键。
Definition of the Halogen Bond (IUPAC Recommendations 2013): A Revisit
This Article revisits the “Definition of the Halogen Bond (IUPAC Recommendations 2013)” [Desiraju, G. R.Pure Appl. Chem.2013, 85 (8), 1711–1713], recommendations that fail to include the fundamental, underlying concept of (electrophilic) σ- and p-/π-hole theory and orbital-based charge transfer interactions that accompany halogen bond formation. An electrophilic σ-hole, or p-/π-hole, is an electron-density-deficient region of positive polarity (and positive potential) on the electrostatic surface on the side of halogen along, or orthogonal to, a covalently bonded halogen in a molecular entity that leads to the development of a noncovalent interaction─a halogen bond─when in close proximity to an electron-density-rich nucleophilic region on the same or another identical or different molecular entity, with which it interacts. This Article re-examines the characteristic features of the halogen bond and lists a wide variety of donors and acceptors that participate in halogen bonding. We add caveats that are essential for identifying halogen bonding in chemical systems, necessary for the appropriate use of the terminologies involved. Illustrative examples of chemical systems that feature inter- and intramolecular halogen bonds and other noncovalent interactions in the crystalline phase are given, together with a case study of some dimer systems using first-principles calculations. We also point out that the π-hole/belt (or p-hole/belt) that may develop on the surface of a halogen derivative in halogenated molecules may be prone to forming a π-hole/belt (or p-hole/belt) halogen bond when in close proximity to nucleophiles on another similar or different molecular entity.
期刊介绍:
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.