{"title":"具有等腰梯形多指结构的 18 A/1020 V p-GaN 门控 HEMT","authors":"Yu-Jun Lai, Dian-Ying Wu, Ya-Han Yang, Yu-Chen Liu, Cheng-Yeu Wu, Meng-Chyi Wu","doi":"10.1149/2162-8777/ad620e","DOIUrl":null,"url":null,"abstract":"\n In this article, we investigate the effects of gate and drain field plates and isosceles trapezoidal-shaped multi-finger structures on the characteristics of high current p-GaN-gated high-electron-mobility transistors (HEMTs). By optimizing the lengths of gate and drain field plates, the p-GaN-gated HEMTs with 200 μm have a breakdown voltage of 1893 V, a specific on-resistance of 7.0 mΩ-cm2, and a Baliga figure of merit (BFOM) value of 511 MW/cm2. Using the optimized isosceles trapezoidal-shaped multi-finger metallization on the source and drain, the p-GaN-gated HEMT with a 100 mm gate width can reach a current of 2.3 A. Combining all the optimum parameters of field plates and isosceles trapezoidal-shaped multi-finger, the fabricated 600 mm p-GaN-gated HEMT exhibits an output current of 18 A, an on-resistance of 0.7 Ω, and a breakdown voltage of 1020 V. Furthermore, the device also exhibits good thermal stability at high temperatures. These results demonstrate the potential and advantages of p-GaN-gated HEMT for power applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"18 A/1020 V p-GaN-gated HEMTs with Isosceles Trapezoidal-Shaped Multi-Finger Structure\",\"authors\":\"Yu-Jun Lai, Dian-Ying Wu, Ya-Han Yang, Yu-Chen Liu, Cheng-Yeu Wu, Meng-Chyi Wu\",\"doi\":\"10.1149/2162-8777/ad620e\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In this article, we investigate the effects of gate and drain field plates and isosceles trapezoidal-shaped multi-finger structures on the characteristics of high current p-GaN-gated high-electron-mobility transistors (HEMTs). By optimizing the lengths of gate and drain field plates, the p-GaN-gated HEMTs with 200 μm have a breakdown voltage of 1893 V, a specific on-resistance of 7.0 mΩ-cm2, and a Baliga figure of merit (BFOM) value of 511 MW/cm2. Using the optimized isosceles trapezoidal-shaped multi-finger metallization on the source and drain, the p-GaN-gated HEMT with a 100 mm gate width can reach a current of 2.3 A. Combining all the optimum parameters of field plates and isosceles trapezoidal-shaped multi-finger, the fabricated 600 mm p-GaN-gated HEMT exhibits an output current of 18 A, an on-resistance of 0.7 Ω, and a breakdown voltage of 1020 V. Furthermore, the device also exhibits good thermal stability at high temperatures. These results demonstrate the potential and advantages of p-GaN-gated HEMT for power applications.\",\"PeriodicalId\":11496,\"journal\":{\"name\":\"ECS Journal of Solid State Science and Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Journal of Solid State Science and Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1149/2162-8777/ad620e\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad620e","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
18 A/1020 V p-GaN-gated HEMTs with Isosceles Trapezoidal-Shaped Multi-Finger Structure
In this article, we investigate the effects of gate and drain field plates and isosceles trapezoidal-shaped multi-finger structures on the characteristics of high current p-GaN-gated high-electron-mobility transistors (HEMTs). By optimizing the lengths of gate and drain field plates, the p-GaN-gated HEMTs with 200 μm have a breakdown voltage of 1893 V, a specific on-resistance of 7.0 mΩ-cm2, and a Baliga figure of merit (BFOM) value of 511 MW/cm2. Using the optimized isosceles trapezoidal-shaped multi-finger metallization on the source and drain, the p-GaN-gated HEMT with a 100 mm gate width can reach a current of 2.3 A. Combining all the optimum parameters of field plates and isosceles trapezoidal-shaped multi-finger, the fabricated 600 mm p-GaN-gated HEMT exhibits an output current of 18 A, an on-resistance of 0.7 Ω, and a breakdown voltage of 1020 V. Furthermore, the device also exhibits good thermal stability at high temperatures. These results demonstrate the potential and advantages of p-GaN-gated HEMT for power applications.
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.