电阻式随机存取存储器（RRAM）的多功能紧凑型模型

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-07-15 DOI:10.1016/j.sse.2024.108989

Chien-Ting Tung, Chetan Kumar Dabhi, Sayeef Salahuddin, Chenming Hu

{"title":"电阻式随机存取存储器（RRAM）的多功能紧凑型模型","authors":"Chien-Ting Tung, Chetan Kumar Dabhi, Sayeef Salahuddin, Chenming Hu","doi":"10.1016/j.sse.2024.108989","DOIUrl":null,"url":null,"abstract":"<div><p>We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM). The model unifies the switching mechanisms of these RRAMs into a single framework. We showcase the model’s accuracy in reproducing published experimental device DC and transient characteristics of various RRAM structures. We also demonstrate the model’s efficacy in capturing RRAM variability and conducting 1T1R circuit simulations.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"220 ","pages":"Article 108989"},"PeriodicalIF":1.4000,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A versatile compact model of resistive random-access memory (RRAM)\",\"authors\":\"Chien-Ting Tung, Chetan Kumar Dabhi, Sayeef Salahuddin, Chenming Hu\",\"doi\":\"10.1016/j.sse.2024.108989\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM). The model unifies the switching mechanisms of these RRAMs into a single framework. We showcase the model’s accuracy in reproducing published experimental device DC and transient characteristics of various RRAM structures. We also demonstrate the model’s efficacy in capturing RRAM variability and conducting 1T1R circuit simulations.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"220 \",\"pages\":\"Article 108989\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001382\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001382","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

我们为电阻式随机存取存储器（RRAM）提出了一种通用的紧凑型模型，它可以为氧化物-RRAM（OxRAM）和导电桥-RRAM（CBRAM）等不同类型的 RRAM 器件建模。该模型将这些 RRAM 的开关机制统一到一个框架中。我们展示了该模型在重现已公布的各种 RRAM 结构的实验器件直流和瞬态特性方面的准确性。我们还展示了该模型在捕捉 RRAM 可变性和进行 1T1R 电路仿真方面的功效。

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A versatile compact model of resistive random-access memory (RRAM)

We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM). The model unifies the switching mechanisms of these RRAMs into a single framework. We showcase the model’s accuracy in reproducing published experimental device DC and transient characteristics of various RRAM structures. We also demonstrate the model’s efficacy in capturing RRAM variability and conducting 1T1R circuit simulations.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.