利用逆向计数器掺杂曲线降低埋入式沟道 PMOSFET 的低频噪声

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of the Electron Devices Society Pub Date : 2024-07-18 DOI:10.1109/JEDS.2024.3430308

Shuntaro Fujii;Toshiro Sakamoto;Soichi Morita;Tsutomu Miyazaki

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引用次数: 0

摘要

研究了逆向反掺杂（RCD）剖面对埋沟道（BC）PMOSFET 低频噪声（LFN）的影响。RCD 曲线是通过重离子植入形成的。RCD 剖面将 LFN 降低了 50% 以上。使用 TCAD 仿真研究了 RCD 器件中 LFN 减少的原因。结果发现，RCD 曲线本身和硅表面的极性都导致沟道位置变深以及硅表面和沟道位置之间的能障变大。

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Reduction of Low Frequency Noise of Buried Channel PMOSFETs With Retrograde Counter Doping Profiles

The impacts of retrograde counter doping (RCD) profiles on low frequency noise (LFN) of buried channel (BC) PMOSFETs were investigated. RCD profiles were formed using heavy ion implantation. The RCD profile reduced LFN by more than 50%. The origin of LFN reduction in the RCD device was investigated using TCAD simulation. It was found that both RCD profile itself and the polarity of Si surface contributed to the deeper channel position and larger energy barrier between Si surface and channel position.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.