关于 Perovskite 太阳能电池热行为的综合研究

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2024-07-18 DOI:10.1109/TCPMT.2024.3430220
Ahmad Halal;Balázs Plesz
{"title":"关于 Perovskite 太阳能电池热行为的综合研究","authors":"Ahmad Halal;Balázs Plesz","doi":"10.1109/TCPMT.2024.3430220","DOIUrl":null,"url":null,"abstract":"The precise understanding of perovskite solar cells (PSCs) under different temperature conditions is crucial for quality control and performance evaluation in real-life operational environments. Furthermore, it aids in evaluating how temperature variation affects the current mismatch in the perovskite/crystalline silicon (c-Si)-based tandem solar cells. This study scrutinizes the temperature-dependent performance of PSCs using numerical simulations in SCAPS software, based on the investigations that were performed to determine the effect of temperature on characteristic parameters like open-circuit voltage, short-circuit current, maximum power point voltage and current, efficiency, fill factor (FF) and the spectral response (SR). In addition, single-diode model (SDM) parameters (photocurrent, reverse saturation current, and ideality factor) were determined from the simulated curves of the PSCs. The findings demonstrate a commendable thermal stability for PSCs within the \n<inline-formula> <tex-math>$20~^{\\circ }$ </tex-math></inline-formula>\nC–\n<inline-formula> <tex-math>$55~^{\\circ }$ </tex-math></inline-formula>\nC temperature range, with a power temperature coefficient of -0.25% °C-1, a lower value than in average c-Si solar cells. However, at temperatures exceeding \n<inline-formula> <tex-math>$55~^{\\circ }$ </tex-math></inline-formula>\nC, a significantly higher power temperature coefficient of up to -0.67% °C-1 was observed. The results highlighted a contrasting response to temperature changes between PSCs and c-Si solar cells: in PSCs, an increasing temperature leads to a slight drop in open-circuit voltage (\n<inline-formula> <tex-math>$V_{\\mathrm {OC}}$ </tex-math></inline-formula>\n) and short-circuit current (\n<inline-formula> <tex-math>$J_{\\mathrm {SC}}$ </tex-math></inline-formula>\n) values, whereas, in the case of c-Si, there is a drastic drop in \n<inline-formula> <tex-math>$V_{\\mathrm {OC}}$ </tex-math></inline-formula>\n while the \n<inline-formula> <tex-math>$J_{\\mathrm {SC}}$ </tex-math></inline-formula>\n increases. Moreover, the calculated SR of PSCs demonstrated the same slight difference of temperature behavior at temperatures up to \n<inline-formula> <tex-math>$55~^{\\circ }$ </tex-math></inline-formula>\nC and under the whole spectrum wavelength range, whereas c-Si only remains stable in the ultraviolet and visible spectrum. Finally, evaluating the single-diode parameters also revealed contrasting thermal behavior between PSCs and c-Si solar cells, particularly in photocurrent density. PSCs also show a slight rise in ideality factor below \n<inline-formula> <tex-math>$55~^{\\circ }$ </tex-math></inline-formula>\nC, but this dependency intensifies at higher temperatures.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 10","pages":"1753-1760"},"PeriodicalIF":2.3000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Comprehensive Study on the Thermal Behavior of Perovskite Solar Cell\",\"authors\":\"Ahmad Halal;Balázs Plesz\",\"doi\":\"10.1109/TCPMT.2024.3430220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The precise understanding of perovskite solar cells (PSCs) under different temperature conditions is crucial for quality control and performance evaluation in real-life operational environments. Furthermore, it aids in evaluating how temperature variation affects the current mismatch in the perovskite/crystalline silicon (c-Si)-based tandem solar cells. This study scrutinizes the temperature-dependent performance of PSCs using numerical simulations in SCAPS software, based on the investigations that were performed to determine the effect of temperature on characteristic parameters like open-circuit voltage, short-circuit current, maximum power point voltage and current, efficiency, fill factor (FF) and the spectral response (SR). In addition, single-diode model (SDM) parameters (photocurrent, reverse saturation current, and ideality factor) were determined from the simulated curves of the PSCs. The findings demonstrate a commendable thermal stability for PSCs within the \\n<inline-formula> <tex-math>$20~^{\\\\circ }$ </tex-math></inline-formula>\\nC–\\n<inline-formula> <tex-math>$55~^{\\\\circ }$ </tex-math></inline-formula>\\nC temperature range, with a power temperature coefficient of -0.25% °C-1, a lower value than in average c-Si solar cells. However, at temperatures exceeding \\n<inline-formula> <tex-math>$55~^{\\\\circ }$ </tex-math></inline-formula>\\nC, a significantly higher power temperature coefficient of up to -0.67% °C-1 was observed. The results highlighted a contrasting response to temperature changes between PSCs and c-Si solar cells: in PSCs, an increasing temperature leads to a slight drop in open-circuit voltage (\\n<inline-formula> <tex-math>$V_{\\\\mathrm {OC}}$ </tex-math></inline-formula>\\n) and short-circuit current (\\n<inline-formula> <tex-math>$J_{\\\\mathrm {SC}}$ </tex-math></inline-formula>\\n) values, whereas, in the case of c-Si, there is a drastic drop in \\n<inline-formula> <tex-math>$V_{\\\\mathrm {OC}}$ </tex-math></inline-formula>\\n while the \\n<inline-formula> <tex-math>$J_{\\\\mathrm {SC}}$ </tex-math></inline-formula>\\n increases. Moreover, the calculated SR of PSCs demonstrated the same slight difference of temperature behavior at temperatures up to \\n<inline-formula> <tex-math>$55~^{\\\\circ }$ </tex-math></inline-formula>\\nC and under the whole spectrum wavelength range, whereas c-Si only remains stable in the ultraviolet and visible spectrum. Finally, evaluating the single-diode parameters also revealed contrasting thermal behavior between PSCs and c-Si solar cells, particularly in photocurrent density. PSCs also show a slight rise in ideality factor below \\n<inline-formula> <tex-math>$55~^{\\\\circ }$ </tex-math></inline-formula>\\nC, but this dependency intensifies at higher temperatures.\",\"PeriodicalId\":13085,\"journal\":{\"name\":\"IEEE Transactions on Components, Packaging and Manufacturing Technology\",\"volume\":\"14 10\",\"pages\":\"1753-1760\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Components, Packaging and Manufacturing Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10601217/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Components, Packaging and Manufacturing Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10601217/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

准确了解不同温度条件下的包晶体太阳能电池(PSC)对于在实际操作环境中进行质量控制和性能评估至关重要。此外,它还有助于评估温度变化如何影响基于包晶石/晶体硅(c-Si)的串联太阳能电池中的电流失配。本研究使用 SCAPS 软件进行数值模拟,在确定温度对开路电压、短路电流、最大功率点电压和电流、效率、填充因子 (FF) 和光谱响应 (SR) 等特征参数的影响的基础上,仔细研究了 PSC 随温度变化的性能。此外,还根据 PSC 的模拟曲线确定了单二极管模型 (SDM) 参数(光电流、反向饱和电流和理想化系数)。研究结果表明,在 20~^{\circ }$ C-55~^{\circ }$ C 的温度范围内,PSCs 具有值得称赞的热稳定性,功率温度系数为 -0.25% °C-1,低于普通晶体硅太阳能电池。然而,当温度超过 55~^{\circ }$ C 时,观察到的功率温度系数显著升高,最高可达 -0.67% °C-1。结果表明,PSC 和晶体硅太阳能电池对温度变化的反应截然不同:在 PSC 中,温度升高导致开路电压($V_{\mathrm {OC}}$ )和短路电流($J_{\mathrm {SC}}$)值略有下降,而在晶体硅中,$V_{\mathrm {OC}}$ 急剧下降,而 $J_{\mathrm {SC}}$ 则增加。此外,计算得出的 PSCs SR 在高达 $55~^{\circ }$ C 的温度和整个光谱波长范围内都表现出同样的微小温度行为差异,而晶体硅仅在紫外和可见光谱中保持稳定。最后,对单二极管参数的评估也揭示了 PSC 和晶体硅太阳能电池之间截然不同的热行为,尤其是在光电流密度方面。在低于 55~^{\circ }$ C 时,PSC 的意向系数会略有上升,但在更高温度下,这种依赖性会增强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A Comprehensive Study on the Thermal Behavior of Perovskite Solar Cell
The precise understanding of perovskite solar cells (PSCs) under different temperature conditions is crucial for quality control and performance evaluation in real-life operational environments. Furthermore, it aids in evaluating how temperature variation affects the current mismatch in the perovskite/crystalline silicon (c-Si)-based tandem solar cells. This study scrutinizes the temperature-dependent performance of PSCs using numerical simulations in SCAPS software, based on the investigations that were performed to determine the effect of temperature on characteristic parameters like open-circuit voltage, short-circuit current, maximum power point voltage and current, efficiency, fill factor (FF) and the spectral response (SR). In addition, single-diode model (SDM) parameters (photocurrent, reverse saturation current, and ideality factor) were determined from the simulated curves of the PSCs. The findings demonstrate a commendable thermal stability for PSCs within the $20~^{\circ }$ C– $55~^{\circ }$ C temperature range, with a power temperature coefficient of -0.25% °C-1, a lower value than in average c-Si solar cells. However, at temperatures exceeding $55~^{\circ }$ C, a significantly higher power temperature coefficient of up to -0.67% °C-1 was observed. The results highlighted a contrasting response to temperature changes between PSCs and c-Si solar cells: in PSCs, an increasing temperature leads to a slight drop in open-circuit voltage ( $V_{\mathrm {OC}}$ ) and short-circuit current ( $J_{\mathrm {SC}}$ ) values, whereas, in the case of c-Si, there is a drastic drop in $V_{\mathrm {OC}}$ while the $J_{\mathrm {SC}}$ increases. Moreover, the calculated SR of PSCs demonstrated the same slight difference of temperature behavior at temperatures up to $55~^{\circ }$ C and under the whole spectrum wavelength range, whereas c-Si only remains stable in the ultraviolet and visible spectrum. Finally, evaluating the single-diode parameters also revealed contrasting thermal behavior between PSCs and c-Si solar cells, particularly in photocurrent density. PSCs also show a slight rise in ideality factor below $55~^{\circ }$ C, but this dependency intensifies at higher temperatures.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Transactions on Components, Packaging and Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology ENGINEERING, MANUFACTURING-ENGINEERING, ELECTRICAL & ELECTRONIC
CiteScore
4.70
自引率
13.60%
发文量
203
审稿时长
3 months
期刊介绍: IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.
期刊最新文献
Table of Contents Front Cover Table of Contents Front Cover IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1