静态电流为 0.91μA 的无电容 LDO，具有亚阈值瞬态增强和批量驱动前馈电源纹波消除功能

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-07-23 DOI:10.1016/j.mejo.2024.106311

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引用次数: 0

摘要

本文介绍了一种无电容低压差（OCL-LDO）稳压器，它具有低静态电流的特点，适用于低功耗应用。为了增强 OCL-LDO 的瞬态响应，本文提出了一种阈值下瞬态增强电路，包括一个瞬态信号输入级、一个电流减法器和一个电流放大器。同时，为了提高 OCL-LDO 的 PSR，还开发了一个由批量驱动纹波前馈电路和纹波引入电路组成的电路。所提出的 OCL-LDO 采用 0.18 μm 标准 CMOS 工艺制造，有效面积为 0.053 mm2。根据测量结果，拟议的 OCL-LDO 在 1.2 V 输入和 1 V 输出电压下的最大负载电流为 100 mA，最小静态电流为 0.91 μA。过冲电压和欠冲电压分别为 199 mV 和 204 mV。当负载电流为 100 mA 时，OCL-LDO 在 1 KHz 频率下的 PSR 为 -71.8 dB。此外，OCL-LDO 的负载调节为 11.1 μV/mA，线路调节为 1.05 mV/V。

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A 0.91-μA-quiescent-current capacitor-less LDO with sub-threshold transient enhancement and bulk-driven feed-forward supply ripple cancellation

This paper presents a capacitor-less low-dropout (OCL-LDO) regulator that features a low quiescent current for low power applications. To enhance the transient response of proposed OCL-LDO, a sub-threshold transient enhancement circuit including a transient signal input stage, a current subtractor, and a current amplifier is suggested. Meanwhile, a circuit made up of a bulk-driven ripple feed-forward circuit and a ripple introduction circuit is developed in order to improve PSR of the OCL-LDO. The proposed OCL-LDO is fabricated in 0.18 $μ$ m standard CMOS process and has an active area of 0.053 mm². Based on measurement results, the proposed OCL-LDO has a maximum load current of 100 mA at 1.2 V input and 1 V output, and a minimum quiescent current of 0.91 $μ$ A. The overshoot voltage and undershoot voltage are 199 mV and 204 mV, respectively. PSR of the OCL-LDO is $-$ 71.8 dB at 1 KHz when the load current is 100 mA. Furthermore, the OCL-LDO exhibits a load regulation of 11.1 $μ$ V/mA and a line regulation of 1.05 mV/V.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.