用于神经刺激应用的具有双环控制和基于微分器的瞬态增强器的全集成电荷泵

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-07-16 DOI:10.1016/j.mejo.2024.106313
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引用次数: 0

摘要

本文提出了一种全集成电荷泵(CP),具有双环控制和基于微分器的瞬态增强器(DTE),适用于高压神经刺激应用。双环控制包括时钟电源电压 (VCLK) 调制环和脉冲频率调制 (PFM) 环。VCLK 调制环通过调节 VCLK 来调节输出电压,而 PFM 环则根据负载电流调节 CP 的工作频率,以提高功率效率。拟议的 CP 将输出电压调节和 VCLK 生成功能合二为一,从而大大降低了电路复杂性。拟议的双环控制能够处理不同的直流电流要求,而拟议的 DTE 则能抑制负载瞬态期间输出电压的下冲和过冲。所提出的 CP 采用 0.18μm 三阱 CMOS 工艺进行了仿真,占地面积为 0.537 mm2。布局后仿真结果表明,在 2 mA 负载条件下,它能从 3.6 V 输入电压提供 9 V 稳压输出电压,峰值功率效率为 73.4%。蒙特卡洛仿真表明,在 2 毫安负载瞬态条件下,输出电压的过冲和欠冲均低于 3%。
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A fully integrated charge pump with double-loop control and differentiator-based transient enhancer for neural stimulation applications

This paper proposes a fully integrated charge pump (CP) with a double-loop control and a differentiator-based transient enhancer (DTE) for high-voltage neural stimulation applications. The double-loop control includes a clock-supply-voltage (VCLK) modulation loop and a pulse-frequency modulation (PFM) loop. The VCLK modulation loop regulates the output voltage by adjusting VCLK while the PFM loop adjusts the operating frequency of the CP in accordance with the load current in order to improve power efficiency. The proposed CP combines the function of output voltage regulation and VCLK generation into a single unit, leading to significantly reduced circuit complexity. The proposed double-loop control is capable of dealing with different dc current requirements while the proposed DTE suppresses the undershoots and overshoots of the output voltage during load transients. The proposed CP has been simulated using a 0.18-μm triple-well CMOS process and occupies an area of 0.537 mm2. The post-layout simulation results show that it can provide a regulated 9-V output voltage from a 3.6-V input voltage with a peak power efficiency of 73.4 % at 2-mA load condition. The Monte-Carlo simulation demonstrates that the overshoot and undershoot of the output voltage are kept below 3 % when undergoing a 2-mA load transient.

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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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