Chen-Chen Li;Liang-Feng Qiu;Lin-Sheng Wu;Jun-Fa Mao
{"title":"硅基 3D 射频集成中具有任意工作频率和耦合系数的耦合带状线耦合器的参数建模","authors":"Chen-Chen Li;Liang-Feng Qiu;Lin-Sheng Wu;Jun-Fa Mao","doi":"10.1109/TCPMT.2024.3435863","DOIUrl":null,"url":null,"abstract":"A parametric model is proposed for the coupled stripline coupler with arbitrary operating frequency and coupling coefficient in silicon-based 3-D RF integration. All the three parts of the coupler configuration, including the coupled stripline section, the coupled bends, and the stripline to grounded coplanar waveguide (GCPW) transitions, are modeled and then constructed. The conformal mapping (CM) method is employed to establish the relationship between the key geometrical parameters and the eigenmode characteristic impedances of coupled striplines. The analytical model is validated with high accuracy and the error is less than 4% when compared with the full-wave simulations. A scalable equivalent circuit model is established for the coupled bends with the arbitrary bend angle between 0° and 90°, which is formed by the integration of subregions. An equivalent circuit model is proposed for the stripline-to-GCPW transition and validated by full-wave simulation. Nine coupler prototypes are synthesized and fabricated with three typical coupling coefficients (7, 8, and 11 dB) and three central frequencies (10, 20, and 26.5 GHz). Good agreement is achieved among the S-parameters obtained by the proposed circuit model, full-wave simulations, and on-wafer measurements. The return loss and isolation of the couplers are better than 15 and 20 dB, respectively.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1441-1453"},"PeriodicalIF":2.3000,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Parametric Modeling of Coupled Stripline Coupler With Arbitrary Operating Frequency and Coupling Coefficient in Silicon-Based 3-D RF Integration\",\"authors\":\"Chen-Chen Li;Liang-Feng Qiu;Lin-Sheng Wu;Jun-Fa Mao\",\"doi\":\"10.1109/TCPMT.2024.3435863\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A parametric model is proposed for the coupled stripline coupler with arbitrary operating frequency and coupling coefficient in silicon-based 3-D RF integration. All the three parts of the coupler configuration, including the coupled stripline section, the coupled bends, and the stripline to grounded coplanar waveguide (GCPW) transitions, are modeled and then constructed. The conformal mapping (CM) method is employed to establish the relationship between the key geometrical parameters and the eigenmode characteristic impedances of coupled striplines. The analytical model is validated with high accuracy and the error is less than 4% when compared with the full-wave simulations. A scalable equivalent circuit model is established for the coupled bends with the arbitrary bend angle between 0° and 90°, which is formed by the integration of subregions. An equivalent circuit model is proposed for the stripline-to-GCPW transition and validated by full-wave simulation. Nine coupler prototypes are synthesized and fabricated with three typical coupling coefficients (7, 8, and 11 dB) and three central frequencies (10, 20, and 26.5 GHz). Good agreement is achieved among the S-parameters obtained by the proposed circuit model, full-wave simulations, and on-wafer measurements. The return loss and isolation of the couplers are better than 15 and 20 dB, respectively.\",\"PeriodicalId\":13085,\"journal\":{\"name\":\"IEEE Transactions on Components, Packaging and Manufacturing Technology\",\"volume\":\"14 8\",\"pages\":\"1441-1453\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-07-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Components, Packaging and Manufacturing Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10614625/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Components, Packaging and Manufacturing Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10614625/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Parametric Modeling of Coupled Stripline Coupler With Arbitrary Operating Frequency and Coupling Coefficient in Silicon-Based 3-D RF Integration
A parametric model is proposed for the coupled stripline coupler with arbitrary operating frequency and coupling coefficient in silicon-based 3-D RF integration. All the three parts of the coupler configuration, including the coupled stripline section, the coupled bends, and the stripline to grounded coplanar waveguide (GCPW) transitions, are modeled and then constructed. The conformal mapping (CM) method is employed to establish the relationship between the key geometrical parameters and the eigenmode characteristic impedances of coupled striplines. The analytical model is validated with high accuracy and the error is less than 4% when compared with the full-wave simulations. A scalable equivalent circuit model is established for the coupled bends with the arbitrary bend angle between 0° and 90°, which is formed by the integration of subregions. An equivalent circuit model is proposed for the stripline-to-GCPW transition and validated by full-wave simulation. Nine coupler prototypes are synthesized and fabricated with three typical coupling coefficients (7, 8, and 11 dB) and three central frequencies (10, 20, and 26.5 GHz). Good agreement is achieved among the S-parameters obtained by the proposed circuit model, full-wave simulations, and on-wafer measurements. The return loss and isolation of the couplers are better than 15 and 20 dB, respectively.
期刊介绍:
IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.