{"title":"论电解过程中 LiCl-KCl-CsCl-K2SiF6 熔体中硅离子浓度的稳定性","authors":"Yulia Parasotchenko, Andrey Suzdaltsev, Yuriy Zaikov","doi":"10.1007/s12633-024-03096-4","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, the interaction of K<sub>2</sub>SiF<sub>6</sub> with LiCl–KCl-CsCl chloride melts was studied using cyclic voltammetry and atomic emission spectroscopy analysis, depending on their cationic composition in the temperature range from 550 to 665 °C. It has been determined that an increase in the CsCl/LiCl ratio leads to a decrease in the rate of decomposition of the K<sub>2</sub>SiF<sub>6</sub> additive due to the formation of compounds with greater stability due to the replacement of the cation and the predominance of the corresponding reactions. Based on the results of ICP-AES, a decrease in the concentration of silicon ions in the melt during electrolysis was detected, and its final values in the melts at the end of the 12-h exposure were determined. During electrolysis, the silicon concentration also decreases, and in the case of a short electrolysis duration (up to 4 h), it is possible to maintain a sufficient concentration to be carried out without introducing additional K<sub>2</sub>SiF<sub>6</sub> in the process. The optimal composition for electrodeposition was also determined, and it was found that a high LiCl content in the melt leads to the formation of lithium fluoride and its inclusion in the deposit.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 15","pages":"5625 - 5636"},"PeriodicalIF":2.8000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the Stability of the Concentration of Silicon Ions in LiCl–KCl-CsCl-K2SiF6 Melts During Electrolysis\",\"authors\":\"Yulia Parasotchenko, Andrey Suzdaltsev, Yuriy Zaikov\",\"doi\":\"10.1007/s12633-024-03096-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, the interaction of K<sub>2</sub>SiF<sub>6</sub> with LiCl–KCl-CsCl chloride melts was studied using cyclic voltammetry and atomic emission spectroscopy analysis, depending on their cationic composition in the temperature range from 550 to 665 °C. It has been determined that an increase in the CsCl/LiCl ratio leads to a decrease in the rate of decomposition of the K<sub>2</sub>SiF<sub>6</sub> additive due to the formation of compounds with greater stability due to the replacement of the cation and the predominance of the corresponding reactions. Based on the results of ICP-AES, a decrease in the concentration of silicon ions in the melt during electrolysis was detected, and its final values in the melts at the end of the 12-h exposure were determined. During electrolysis, the silicon concentration also decreases, and in the case of a short electrolysis duration (up to 4 h), it is possible to maintain a sufficient concentration to be carried out without introducing additional K<sub>2</sub>SiF<sub>6</sub> in the process. The optimal composition for electrodeposition was also determined, and it was found that a high LiCl content in the melt leads to the formation of lithium fluoride and its inclusion in the deposit.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"16 15\",\"pages\":\"5625 - 5636\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-024-03096-4\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03096-4","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
On the Stability of the Concentration of Silicon Ions in LiCl–KCl-CsCl-K2SiF6 Melts During Electrolysis
In this work, the interaction of K2SiF6 with LiCl–KCl-CsCl chloride melts was studied using cyclic voltammetry and atomic emission spectroscopy analysis, depending on their cationic composition in the temperature range from 550 to 665 °C. It has been determined that an increase in the CsCl/LiCl ratio leads to a decrease in the rate of decomposition of the K2SiF6 additive due to the formation of compounds with greater stability due to the replacement of the cation and the predominance of the corresponding reactions. Based on the results of ICP-AES, a decrease in the concentration of silicon ions in the melt during electrolysis was detected, and its final values in the melts at the end of the 12-h exposure were determined. During electrolysis, the silicon concentration also decreases, and in the case of a short electrolysis duration (up to 4 h), it is possible to maintain a sufficient concentration to be carried out without introducing additional K2SiF6 in the process. The optimal composition for electrodeposition was also determined, and it was found that a high LiCl content in the melt leads to the formation of lithium fluoride and its inclusion in the deposit.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.