基于 α-Ga2O3 的自供电紫外线探测器,速度性能令人着迷

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2024-07-31 DOI:10.1088/1674-4926/24020001
Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov and Andrei Chikiryaka
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引用次数: 0

摘要

利用带有铂相互接触的高质量单晶α-Ga2O3 薄膜,开发了用于检测短波长紫外线(UVC)区间辐照的探测器。α-Ga2O3薄膜是利用卤化物气相外延技术在具有c平面取向的平面蓝宝石衬底上生长的。在 200-370 nm 波长范围内,研究了该结构的光暗电流比、响应度、外部量子效率和检测度的光谱依赖性。在波长为 230 nm、外加电压为 1 V 时,该结构的光暗电流比、响应率、外部量子效率和检测率分别达到 1.16 × 104 arb.由于 Pt/α-Ga2O3 界面的内置电场,基于 α-Ga2O3 薄膜的紫外线检测器可在自供电运行模式下工作。在波长为 254 nm、外加电压为零的条件下,该结构的响应率为 0.13 mA/W,外部量子效率为 6.2 × 10-2%。基于 α-Ga2O3 薄膜的紫外线检测器具有高速性能,在自供电模式下上升时间为 18 毫秒。
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Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance
Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α-Ga2O3 films with Pt interdigital contacts. The films of α-Ga2O3 were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy. The spectral dependencies of the photo to dark current ratio, responsivity, external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm. The maximum of photo to dark current ratio, responsivity, external quantum efficiency, and detectivity of the structures were 1.16 × 104 arb. un., 30.6 A/W, 1.65 × 104%, and 6.95 × 1015 Hz0.5·cm/W at a wavelength of 230 nm and an applied voltage of 1 V. The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping. The α-Ga2O3 film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga2O3 interfaces. At a wavelength of 254 nm and zero applied voltage, the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2 × 10−2%. The UVC detectors based on the α-Ga2O3 films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
期刊最新文献
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