充分退火后 MOCVD 生长的 p-GaN 在室温下的可实现空穴浓度与镁浓度的函数关系

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2024-07-31 DOI:10.1088/1674-4926/24010017
Siyi Huang, Masao Ikeda, Feng Zhang, Minglong Zhang, Jianjun Zhu, Shuming Zhang and Jianping Liu
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摘要

本文研究了通过 MOCVD 技术生长的 p-GaN 在充分退火后室温下的空穴浓度与掺镁浓度之间的关系。对不同掺镁范围的 p-GaN 样品采用了不同的退火条件以获得充分的活化。通过室温霍尔测量表征了空穴浓度、电阻率和迁移率。通过二次离子质谱法测量了掺镁浓度以及 H、C、O 和 Si 等残留杂质,证实杂质的补偿作用可以忽略不计。空穴浓度、电阻率和迁移率数据是掺镁浓度的函数,并与文献数据进行了比较。利用电荷中性方程推导出了掺镁浓度与空穴浓度之间的适当曲线,并确定了镁受体的电离能与电离受体密度[ ](cm-3)有关,即 = 184 - 2.66 × 10-5 × [ ]1/3 meV。
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Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing
Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper. Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges. Hole concentration, resistivity and mobility were characterized by room-temperature Hall measurements. The Mg doping concentration and the residual impurities such as H, C, O and Si were measured by secondary ion mass spectroscopy, confirming negligible compensations by the impurities. The hole concentration, resistivity and mobility data are presented as a function of Mg concentration, and are compared with literature data. The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density [ ] (cm−3) dependent ionization energy of Mg acceptor was determined as = 184 − 2.66 × 10−5 × [ ]1/3 meV.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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