通过 PN 结光刻的高性能 MoS2 光晶体管

Seyed Saleh Mousavi Khaleghi, Jianyong Wei, Yumeng Liu, Zhengfang Fan, Kai Li, Kenneth B. Crozier, Yaping Dan
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引用次数: 0

摘要

基于二维(2D)原子薄半导体的光电探测器存在光吸收率低的问题,限制了其实际应用的潜力。在这项工作中,我们在硅衬底上形成的 PN 结上集成了几层 MoS2,从而展示了一种高性能的 MoS2 光电晶体管。在光照下,PN 结中产生的光电压对 MoS2 沟道进行电栅极化,从而在 MoS2 中产生强烈的光响应。我们提出了器件光响应的分析模型,并表明该模型与测量到的 MoS2 光电流和硅 PN 结中的光电压非常吻合。这种器件结构分离了光吸收和电响应功能,为我们提供了设计新型光电探测器的机会。例如,在栅极结构中加入铁电材料可以产生负电容,从而提高栅极电压,实现低功耗、高灵敏度光电晶体管;再加上光吸收和电反应功能的分离,就可以设计出先进的高性能光电探测器。
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High Performance MoS2 Phototransistors Photogated by PN Junction
Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by integrating few-layer MoS2 on a PN junction formed in a silicon (Si) substrate. The photovoltage created in the PN junction under light illumination electrically gates the MoS2 channel, creating a strong photoresponse in MoS2. We present an analytical model for the photoresponse of our device and show that it is in good agreement with measured experimental photocurrent in MoS2 and photovoltage in the Si PN junction. This device structure separates light absorption and electrical response functions, which provides us an opportunity to design new types of photodetectors. For example, incorporating ferroelectric materials into the gate structure can produce a negative capacitance that boosts gate voltage, enabling low power, high sensitivity phototransistor; this, combined with separating light absorption and electrical functions, enables advanced high-performance photodetectors.
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