Lin Luo;Linlin Xu;Jiuzhou Zhao;Renli Liang;Zhengchen Li;Yang Peng;Xinzhong Wang;Jiangnan Dai;Mingxiang Chen
{"title":"通过激光局部加热和焊接实现深紫外发光二极管的全无机密封封装","authors":"Lin Luo;Linlin Xu;Jiuzhou Zhao;Renli Liang;Zhengchen Li;Yang Peng;Xinzhong Wang;Jiangnan Dai;Mingxiang Chen","doi":"10.1109/TED.2024.3435182","DOIUrl":null,"url":null,"abstract":"Deep-ultraviolet light-emitting diodes (DUV-LEDs) represent a new generation of ultraviolet light sources with applications in sterilization, medical health, and biological detection. However, the traditional organic packaging is unable to meet the rigorous requirements of highly reliable high-power DUV-LEDs. In this work, an all-inorganic hermetic packaging solution based on laser localized heating and welding was developed for high-power DUV-LEDs. The parameters of laser localized welding were optimized to obtain a high-strength, crack-free welded joint. In the transition welding mode, the packaging cavity displays excellent gas tightness with a leakage rate of \n<inline-formula> <tex-math>$1.25\\times 10^{-{9}}~\\text {Pa}\\cdot \\text {m}^{{3}}$ </tex-math></inline-formula>\n/s and the welded joint achieves high shear strength of 184.8 MPa. At a driving current of 350 mA, the voltage and light output power (LOP) of the packaged DUV-LED are 6.172 V and 60.44 mW, respectively. After the accelerated aging test for 250 h, the LOP of hermetic packaged DUV-LED exhibited a mere 3.24% reduction, in contrast to the 31.76% and 41.18% declines in traditional semi-inorganic packaged and unpackaged DUV-LEDs, respectively. Our work provides a meaningful guidance and solution for the highly reliable and board-level packaging of DUV-LEDs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"All-Inorganic Hermetic Packaging of Deep-Ultraviolet Light-Emitting Diodes Through Laser Localized Heating and Welding\",\"authors\":\"Lin Luo;Linlin Xu;Jiuzhou Zhao;Renli Liang;Zhengchen Li;Yang Peng;Xinzhong Wang;Jiangnan Dai;Mingxiang Chen\",\"doi\":\"10.1109/TED.2024.3435182\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Deep-ultraviolet light-emitting diodes (DUV-LEDs) represent a new generation of ultraviolet light sources with applications in sterilization, medical health, and biological detection. However, the traditional organic packaging is unable to meet the rigorous requirements of highly reliable high-power DUV-LEDs. In this work, an all-inorganic hermetic packaging solution based on laser localized heating and welding was developed for high-power DUV-LEDs. The parameters of laser localized welding were optimized to obtain a high-strength, crack-free welded joint. In the transition welding mode, the packaging cavity displays excellent gas tightness with a leakage rate of \\n<inline-formula> <tex-math>$1.25\\\\times 10^{-{9}}~\\\\text {Pa}\\\\cdot \\\\text {m}^{{3}}$ </tex-math></inline-formula>\\n/s and the welded joint achieves high shear strength of 184.8 MPa. At a driving current of 350 mA, the voltage and light output power (LOP) of the packaged DUV-LED are 6.172 V and 60.44 mW, respectively. After the accelerated aging test for 250 h, the LOP of hermetic packaged DUV-LED exhibited a mere 3.24% reduction, in contrast to the 31.76% and 41.18% declines in traditional semi-inorganic packaged and unpackaged DUV-LEDs, respectively. Our work provides a meaningful guidance and solution for the highly reliable and board-level packaging of DUV-LEDs.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10628013/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10628013/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
All-Inorganic Hermetic Packaging of Deep-Ultraviolet Light-Emitting Diodes Through Laser Localized Heating and Welding
Deep-ultraviolet light-emitting diodes (DUV-LEDs) represent a new generation of ultraviolet light sources with applications in sterilization, medical health, and biological detection. However, the traditional organic packaging is unable to meet the rigorous requirements of highly reliable high-power DUV-LEDs. In this work, an all-inorganic hermetic packaging solution based on laser localized heating and welding was developed for high-power DUV-LEDs. The parameters of laser localized welding were optimized to obtain a high-strength, crack-free welded joint. In the transition welding mode, the packaging cavity displays excellent gas tightness with a leakage rate of
$1.25\times 10^{-{9}}~\text {Pa}\cdot \text {m}^{{3}}$
/s and the welded joint achieves high shear strength of 184.8 MPa. At a driving current of 350 mA, the voltage and light output power (LOP) of the packaged DUV-LED are 6.172 V and 60.44 mW, respectively. After the accelerated aging test for 250 h, the LOP of hermetic packaged DUV-LED exhibited a mere 3.24% reduction, in contrast to the 31.76% and 41.18% declines in traditional semi-inorganic packaged and unpackaged DUV-LEDs, respectively. Our work provides a meaningful guidance and solution for the highly reliable and board-level packaging of DUV-LEDs.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.