利用闪烁噪声评估 BTI 应力后 MOS 接口陷阱的生成情况

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Reliability Pub Date : 2024-08-09 DOI:10.1016/j.microrel.2024.115478

Yi Jiang , Yanning Chen , Fang Liu , Bo Wu , Yongfeng Deng , Dawei Gao , Junkang Li , John Robertson , Rui Zhang

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引用次数: 0

摘要

本研究利用亚阈值摆幅劣化（ΔS 因子）、阈值电压偏移（ΔVth）和闪烁噪声（1/f 噪声）特性，对 Si p- 和 n-MOSFET 的弱偏置温度不稳定性（BTI）进行了系统研究。研究发现，在弱 BTI 应力下，1/f 噪声特性比 Si/SiO2 界面退化更为明显。此外，观察到的 1/f 噪声特性与 MOS 界面陷阱密度之间的线性关系得到了载流子数波动模型的证实，这表明 1/f 噪声特性可被视为评估弱 BTI 应力后 MOS 界面质量的灵敏而有效的指标。

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Evaluation of MOS interface trap generation after BTI stress using flicker noise

In this study, the weak bias temperature instability (BTI) in both Si p- and n-MOSFETs was systematically investigated using subthreshold swing degradation (ΔS factor), threshold voltage shift (ΔV_th) and flicker noise (1/f noise) characteristics. It is found that the 1/f noise characteristics exhibit more pronounced deterioration compared to the Si/SiO₂ interface degeneration under weak BTI stress. Furthermore, the observed linear relationship between the 1/f noise characteristics and MOS interface trap density was confirmed by the carrier number fluctuation model, indicating that 1/f noise characteristics could be considered as a sensitive and effective indicator for assessing MOS interface quality after weak BTI stress.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.