比较二维纠错码的结构

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Reliability Pub Date : 2024-08-17 DOI:10.1016/j.microrel.2024.115481
Adahil Muniz , Lucas Mazzoco , Wagner Savaris , Eduarda Pissolatto , Tiago Beneditto , Andrew Fritsch , Jarbas Silveira , César Marcon
{"title":"比较二维纠错码的结构","authors":"Adahil Muniz ,&nbsp;Lucas Mazzoco ,&nbsp;Wagner Savaris ,&nbsp;Eduarda Pissolatto ,&nbsp;Tiago Beneditto ,&nbsp;Andrew Fritsch ,&nbsp;Jarbas Silveira ,&nbsp;César Marcon","doi":"10.1016/j.microrel.2024.115481","DOIUrl":null,"url":null,"abstract":"<div><p>Advances in integrated circuit production technologies have reduced device sizes, leading to corresponding scaling in electrical characteristics, such as threshold voltage. This scaling has increased the susceptibility of devices to electromagnetic radiation, raising the bitflip probability. Systems requiring a certain level of fault tolerance employ techniques like Error Correction Codes (ECC), providing a degree of reliability in mitigating this issue. The error correction and detection efficacies and ECC scalability vary based on the encoding and codestruct employed. This study employs four Hamming and parity code organizations for performing four Two-Dimensional (2D)-ECCs (N × 4p, N × ExHam, N × Ham_p, and N × Ham2_2p). We investigated the scalability, synthesis results, and correction and detection rates employing the same number of check and data bits for the four 2D-ECCs. The results point to the advantages for ECCs that employ cross-checking using radiation-hardened memories for checkbits, especially when ECCs scale to large codestructs.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"161 ","pages":"Article 115481"},"PeriodicalIF":1.6000,"publicationDate":"2024-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparing structures of two-dimensional error correction codes\",\"authors\":\"Adahil Muniz ,&nbsp;Lucas Mazzoco ,&nbsp;Wagner Savaris ,&nbsp;Eduarda Pissolatto ,&nbsp;Tiago Beneditto ,&nbsp;Andrew Fritsch ,&nbsp;Jarbas Silveira ,&nbsp;César Marcon\",\"doi\":\"10.1016/j.microrel.2024.115481\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Advances in integrated circuit production technologies have reduced device sizes, leading to corresponding scaling in electrical characteristics, such as threshold voltage. This scaling has increased the susceptibility of devices to electromagnetic radiation, raising the bitflip probability. Systems requiring a certain level of fault tolerance employ techniques like Error Correction Codes (ECC), providing a degree of reliability in mitigating this issue. The error correction and detection efficacies and ECC scalability vary based on the encoding and codestruct employed. This study employs four Hamming and parity code organizations for performing four Two-Dimensional (2D)-ECCs (N × 4p, N × ExHam, N × Ham_p, and N × Ham2_2p). We investigated the scalability, synthesis results, and correction and detection rates employing the same number of check and data bits for the four 2D-ECCs. The results point to the advantages for ECCs that employ cross-checking using radiation-hardened memories for checkbits, especially when ECCs scale to large codestructs.</p></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"161 \",\"pages\":\"Article 115481\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-08-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424001616\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424001616","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

集成电路生产技术的进步缩小了器件尺寸,导致阈值电压等电气特性的相应缩放。这种缩放增加了器件对电磁辐射的敏感性,提高了比特翻转概率。需要一定容错能力的系统采用纠错码 (ECC) 等技术,在一定程度上提高了缓解这一问题的可靠性。纠错和检测效率以及 ECC 的可扩展性因所采用的编码和编解码结构而异。本研究采用四种汉明码和奇偶校验码组织来执行四种二维 (2D)-ECC (N × 4p、N × ExHam、N × Ham_p 和 N × Ham2_2p)。我们研究了这四种二维 (2D-ECC) 的可扩展性、合成结果,以及在校验位和数据位数量相同的情况下的校正率和检测率。研究结果表明,采用辐射硬化存储器交叉校验校验位的 ECC 具有优势,特别是当 ECC 扩展到大型编码结构时。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Comparing structures of two-dimensional error correction codes

Advances in integrated circuit production technologies have reduced device sizes, leading to corresponding scaling in electrical characteristics, such as threshold voltage. This scaling has increased the susceptibility of devices to electromagnetic radiation, raising the bitflip probability. Systems requiring a certain level of fault tolerance employ techniques like Error Correction Codes (ECC), providing a degree of reliability in mitigating this issue. The error correction and detection efficacies and ECC scalability vary based on the encoding and codestruct employed. This study employs four Hamming and parity code organizations for performing four Two-Dimensional (2D)-ECCs (N × 4p, N × ExHam, N × Ham_p, and N × Ham2_2p). We investigated the scalability, synthesis results, and correction and detection rates employing the same number of check and data bits for the four 2D-ECCs. The results point to the advantages for ECCs that employ cross-checking using radiation-hardened memories for checkbits, especially when ECCs scale to large codestructs.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
期刊最新文献
Comparative study of single event upset susceptibility in the Complementary FET (CFET) and FinFET based 6T-SRAM Effects of humidity, ionic contaminations and temperature on the degradation of silicone-based sealing materials used in microelectronics Physics-of-failure based lifetime modelling for SiC based automotive power modules using rate- and temperature-dependent modelling of sintered silver Study on single-event burnout hardening with reduction of hole current density by top polysilicon diode of SOI LDMOS based on TCAD simulations An online junction temperature detection circuit for SiC MOSFETs considering threshold voltage drift compensation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1