用于水分离的 S 型 NaxCoO2/g-C3N4 异质结光电催化剂

IF 5.2 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Chemistry and Physics Pub Date : 2024-10-15 Epub Date: 2024-08-13 DOI:10.1016/j.matchemphys.2024.129853
Zhixian Yu , Ling Zhou , Wen-Feng Lin , Yan Wu
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引用次数: 0

摘要

在异质结构光电催化剂上实现高效电荷分离是实现高效水分离技术以实现可持续绿色制氢的关键。本文采用新型 S 型异质结构材料 NaxCoO2/g-C3N4(x = 0.5、0.6 和 0.74)作为光电催化剂进行水分离反应。在电流密度为 10 mA cm-2 的照射条件下,它们相应的过电位值分别约为 590 mV(x = 0.74)、555 mV(x = 0.6)和 710 mV(x = 0.5)。与黑暗条件相比,NaxCoO2/g-C3N4 的过电位较低。XPS 和原位 KPFM 结果进一步证实,在 NaxCoO2 和 g-C3N4 的界面上形成了界面电场。在辐照条件下,电子从 NCO 的传导带流向 CN 的价带,形成 S 型异质结构,从而大大提高了 CN 的还原能力,使水分离产生氢气。
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S-scheme NaxCoO2/g-C3N4 heterojunction photo-electrocatalysts for water splitting

Enabling a highly efficient charge separation on hetero-structural photo-electrocatalyst is crucial to achieve a high efficiency of water splitting technology for sustainable green hydrogen production. Herein, novel S-scheme hetero-structural materials, NaxCoO2/g-C3N4 (x = 0.5, 0.6, and 0.74), have been employed as photo-electrocatalysts for water splitting reaction. Their corresponding overpotential values under irradiation condition with the current density of 10 mA cm−2 were about 590 mV (x = 0.74), 555 mV (x = 0.6) and 710 mV (x = 0.5), respectively. Compared to the dark condition, NaxCoO2/g-C3N4 exhibited lower overpotentials. XPS and in-situ KPFM results further confirmed that an interfacial electric field was formed at the interface of NaxCoO2 and g-C3N4. Under the irradiation condition, the electrons from the conduction band of NCO flow toward to the valence band of CN to form S-scheme heterostructure, which could highly accelerate the reducing capability of CN, hence splitting water to produce hydrogen gas.

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来源期刊
Materials Chemistry and Physics
Materials Chemistry and Physics 工程技术-材料科学:综合
CiteScore
8.70
自引率
4.30%
发文量
1515
审稿时长
69 days
期刊介绍: Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.
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