增强柔性电子器件:揭示应变率在钼涂层 PET 薄膜性能中的作用

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Reliability Pub Date : 2024-08-27 DOI:10.1016/j.microrel.2024.115485
Atif Alkhazali , Mohammad M. Hamasha , Haitham Khaled , Mohammad Shbool , Mazin Obaidat
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引用次数: 0

摘要

本研究分析了厚度为 100 和 200 nm 的钼(Mo)薄膜在不同应变和应变速率条件下的机械和电气特性。研究考察了通过射频磁控溅射法在 PET 基底上沉积的钼薄膜及其机械应力行为。研究揭示了裂纹萌发和扩展的不同模式,其中主要是垂直于施加应变方向的原生裂纹,而次生裂纹则是由于应力重新分布而产生的,显示了薄膜厚度、应变速率和裂纹形态之间复杂的相互作用。本研究的一个重要发现是,在应变速率较高(1000 毫米/分钟)的情况下,较厚的薄膜(200 纳米)会出现更先进、更不规则的裂纹形态,这表明与较薄的薄膜或应变速率较低的薄膜相比,薄膜对机械应力的敏感性更高,断裂过程更混乱。此外,薄膜边缘脱层的情况,尤其是在高应变条件下,凸显了在极端机械变形条件下保持薄膜与基底粘附性和完整性所面临的挑战。这项研究为 Mo 薄膜的机械坚固性和电气性能提供了重要见解,强调了微结构特性、沉积参数和外部应力因素对其在高科技行业应用的影响。研究结果强调了优化沉积技术和了解材料在应力作用下的行为对提高钼薄膜在从半导体器件到光伏系统等实际应用中的耐用性和可靠性的重要性。
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Enhancing flexible electronics: Unveiling the role of strain rate in the performance of molybdenum-coated PET films

This work analyzes the mechanical and electrical properties of molybdenum (Mo) thin films at 100 and 200 nm thicknesses under different strain and strain rate circumstances. The study examines Mo film deposition by RF magnetron sputtering on PET substrates and their mechanical stress behavior. The investigation reveals distinct patterns of crack initiation and propagation, where primary cracks predominantly appear perpendicular to the direction of applied strain, and secondary cracks develop due to stress redistribution, displaying a complex interplay between film thickness, strain rate, and crack morphology. A key finding of this study is the observation of more advanced and irregular crack patterns in thicker films (200 nm) subjected to higher strain rates (1000 mm/min), suggesting a heightened sensitivity to mechanical stress and a more chaotic fracture process compared to thinner films or those under lower strain rates. Additionally, instances of film edge delamination, particularly under high strain conditions, highlight the challenges in maintaining film-substrate adhesion and integrity under extreme mechanical deformation. The research provides critical insights into the mechanical robustness and electrical performance of Mo thin films, emphasizing the influence of microstructural properties, deposition parameters, and external stressors on their applicability in high-tech industries. The findings underscore the importance of optimizing deposition techniques and understanding material behavior under stress to enhance the durability and reliability of Mo thin films in practical applications, ranging from semiconductor devices to photovoltaic systems.

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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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