基于数字间结构 (IDS) 的微带线和射频电路组合的微波传感系统,用于提取液体样品的复介电常数

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2024-09-03 DOI:10.1016/j.sna.2024.115860
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引用次数: 0

摘要

本手稿提出了一种用于提取二元水溶液复介电常数的微波传感系统,该系统基于蚀刻了数字间结构(IDS)的改进型微带线。无源谐振单元和有源电路构成了微波传感系统。无源谐振单元由特性阻抗为 50Ω 的传统微带线演变而来,然后在无源谐振单元的上表面蚀刻 IDS,以增强对电场的限制。改进后的无源传感器可产生两种谐振模式,即奇数模式 1 和奇数模式 2,这两种模式的电场都集中在 IDS 上,采用电场密度较高的奇数模式 1 来获取液体样品的复介电常数。除无源传感器外,传感系统还包括功率分配器、低噪声放大器(LNA)、隔离器、正交混合耦合器、移相器、混频器和低通滤波器(LPF)。拟议的微波传感系统有两个输出直流电压,即通道-I 和通道-Q。拟议的微波传感系统可将复介电常数与谐振频移之间的数学关系转化为复介电常数与两个直流电压之间的关系,这有利于放弃使用 VNA。根据注入不同复介电常数的液体样品,改变微波传感系统的两个输出电压,然后总结复介电常数与直流电压之间的规律,建立数学模型。最后,可以利用建立的数学模型来预测未知复介电常数的二元水溶液。在测量中,所提出的微波传感系统对通道-I 和通道-Q 的平均灵敏度分别约为 2.478 mV/εr′ 和 1.418 mV/εr′,比其他已报道的系统高出数倍。该传感系统具有成本低、灵敏度高、测量方便、易于制造等优点,在检测液体样品领域是一个很好的模板。
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A microwave sensing system combination of interdigital structure (IDS)-based microstrip line and RF circuits for extracting complex permittivity of liquid samples

In this manuscript, a microwave sensing system for extracting complex permittivity of binary aqueous solutions based on a modified microstrip line with interdigital structure (IDS) etched is proposed. The passive resonance unit and active circuits constitute the microwave sensing system. The passive resonance unit is evolved from conventional microstrip line with the characteristic impedance of 50Ω, then the IDS is etched on the top surface of passive resonance unit to enhance the confinement of electrical field. The modified passive sensor can produce two resonant modes, i.e., odd-mode 1 and odd-mode 2, the electrical fields of these two modes are both concentrating at IDS, and odd-mode 1 with higher density of electrical field is adopted to retrieve complex permittivity of liquid samples. Except for the passive sensor, the sensing system consists of power divider, low noise amplifier (LNA), isolator, orthogonal hybrid coupler, phase shifter, mixer, and low-pass filter (LPF). The proposed microwave sensing system has two output DC voltages, i.e., channel-I and channel-Q. The mathematical relationship between complex permittivity and resonant frequency shift can be transformed into the relation between complex permittivity and two DC voltages by the proposed microwave sensing system, which is beneficial to discard the use of VNA. The two output voltages of microwave sensing system will be changed according to the injections of liquid samples with different complex permittivity, then the mathematical models can be established by summarizing the rule between complex permittivity and DC voltages. Finally, the established mathematical models can be adopted to predict the binary aqueous solutions with unknown complex permittivity. In measurement, the proposed microwave sensing system has the average sensitivities of about 2.478 mV/εr and 1.418 mV/εr for channel-I and channel-Q, respectively, which are several times higher than other reported ones. Low-cost, high sensitivity, convenient measurement, and easy fabrication are the merits for the proposed sensing system, and it is a good template in the region of detecting liquid samples.

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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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