High repeatability UV flexible photodetector based on AlInN film prepared by sputtering

Flexible electronics are expected to play a vital role in wearable systems and multifunctional smart electronic devices owing to their capacity to conform to various shapes. The amorphous AlInN film was synthesized on a Polyethylene terephthalate (PET) substrate via radio-frequency (RF) magnetron sputtering to fabricate a flexible AlInN ultraviolet (UV) photodetector. The device demonstrates a sensitivity of 1708, a detectivity (D*) of 3.11 × 10⁷ Jones and satisfactory photoresponse under 365 nm UV excitation. In particular, we carried out the flexibility experiments for device and analysis its photoresponse characteristics. After more than 100 times bending at about 90° angle, the photocurrent of the device remains at 97 % of its original value. These findings demonstrate the potential of AlInN films in the UV flexible photodetection and display an effective fabrication strategy for UV flexible photodetectors.