设计基于微型多谐振共振器的高选择性双宽带带通滤波器

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-09-11 DOI:10.1016/j.mejo.2024.106411
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引用次数: 0

摘要

本文介绍了一种高选择性双宽带带通滤波器的设计。滤波器的设计采用了多谐振谐振器,包括两个由数字间电容器隔开的存根负载阶跃阻抗谐振器。数字间电容器产生电容耦合,从而产生多种谐振模式。拟议的滤波器可产生两个通带频率,分别以 5.75 千兆赫和 11.5 千兆赫为中心。实验测量结果表明,通带内的最大插入损耗分别为 0.83 dB 和 0.87 dB,而反射损耗分别优于 10.8 dB 和 12.6 dB。谐振频率可通过改变负载短路器的长度来调整。所提出的双宽带带通滤波器通过在两个通带周围产生七个传输极点和七个传输零点,提高了带外抑制和选择性。实验结果证实了所提滤波器的有效性。此外,该滤波器体积小巧,仅为 (0.61×0.66)λg 大小,适合集成到微波传感设备中。
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Design of a miniaturized multi resonance resonator based highly selective dual wideband bandpass filter

This paper presents the design of a highly selective dual-wideband bandpass filter. The filter is designed by using multi-resonance resonator consisting of two stub-loaded step impedance resonators separated by an inter-digital capacitor. The inter-digital capacitor generates capacitive coupling, resulting in multiple resonating modes. The proposed filter generates two passband frequencies centered at 5.75 GHz and 11.5 GHz. Experimental measurements show that the maximum insertion loss in the passbands is 0.83 dB and 0.87 dB, while the reflection losses are better than 10.8 dB and 12.6 dB, respectively. The resonant frequencies can be adjusted by changing the length of the loaded stubs. The proposed dual-wideband bandpass filter offers improved out-of-band rejection and selectivity by generating seven transmission poles and seven transmission zeros around both passbands. The experimental results confirm the effectiveness of the proposed filter. Furthermore, the filter has a compact size of (0.61×0.66)λg, making it suitable for integration into microwave sensing devices.

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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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