{"title":"灵敏度更高的基于等离子体的 Si1-xGex 源纳米线隧道场效应晶体管氧气器件","authors":"Navaneet Kumar Singh, Chandan Kumar, Thakur Prasad Mahato, Suraj Kumar, Saquib Azam, Shradhya Singh, Naveen Kumar, Prashant Kumar Singh, Rajib Kar, Durbadal Mandal","doi":"10.1007/s12633-024-03126-1","DOIUrl":null,"url":null,"abstract":"<div><p>In this paper, Charge Plasma Nanowire Tunnel Field Effect Transistor based sensor is proposed for the recognition of Oxygen (O<sub>2</sub>) gas molecules by means of a Silicon Germanium (Si<sub>1-x</sub>Ge<sub>x</sub>) sourced device abbreviated as SiGe-CP-NW-TFET. The electrical performances of SiGe-CP-NW-TFET have been compared with the conventional Charge Plasma Nanowire Tunnel Field Effect Transistor (CP-NW-TFET). The parameters measured for comparison are I<sub>ON</sub>, I<sub>OFF</sub>, I<sub>ON</sub>/I<sub>OFF</sub>, Subthreshold slope (SS), and threshold voltage (V<sub>t</sub>). The proposed SiGe-CP-NW-TFET has better electrical performance as compared to Si-CP-NW-TFET. Further, the device characteristics such as electric potential, electric field, charge carriers, and energy band diagram of both the devices have also been compared. The fundamental physics of the proposed sensor is also explored from a comprehensive electrostatic study of the tunnelling junction in the context of gas molecule adsorption. The influence of device constraints of the proposed SiGe-CP-NW-TFET on the electrical performance indicators has also been studied. The device parameters e.g. oxide thickness, extended gate length, silicon film thickness, and molar concentration of SiGe at the source side are considered. The impact of oxide thickness, extended gate length, the radius of NW, and the concentration of SiGe (molar) at the source side have been analysed on the sensitivity of the O<sub>2</sub> gas sensor. The presented Oxygen gas sensor has an I<sub>ON</sub>/I<sub>OFF</sub> ratio of 3.65 × 10<sup>7</sup> and a subthreshold slope of 58.23 mV/decade.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5891 - 5905"},"PeriodicalIF":2.8000,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Charge Plasma Based Si1-xGex Sourced Nanowire Tunnel Field Effect Transistor Oxygen Gas Device with Enhanced Sensitivity\",\"authors\":\"Navaneet Kumar Singh, Chandan Kumar, Thakur Prasad Mahato, Suraj Kumar, Saquib Azam, Shradhya Singh, Naveen Kumar, Prashant Kumar Singh, Rajib Kar, Durbadal Mandal\",\"doi\":\"10.1007/s12633-024-03126-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this paper, Charge Plasma Nanowire Tunnel Field Effect Transistor based sensor is proposed for the recognition of Oxygen (O<sub>2</sub>) gas molecules by means of a Silicon Germanium (Si<sub>1-x</sub>Ge<sub>x</sub>) sourced device abbreviated as SiGe-CP-NW-TFET. The electrical performances of SiGe-CP-NW-TFET have been compared with the conventional Charge Plasma Nanowire Tunnel Field Effect Transistor (CP-NW-TFET). The parameters measured for comparison are I<sub>ON</sub>, I<sub>OFF</sub>, I<sub>ON</sub>/I<sub>OFF</sub>, Subthreshold slope (SS), and threshold voltage (V<sub>t</sub>). The proposed SiGe-CP-NW-TFET has better electrical performance as compared to Si-CP-NW-TFET. Further, the device characteristics such as electric potential, electric field, charge carriers, and energy band diagram of both the devices have also been compared. The fundamental physics of the proposed sensor is also explored from a comprehensive electrostatic study of the tunnelling junction in the context of gas molecule adsorption. The influence of device constraints of the proposed SiGe-CP-NW-TFET on the electrical performance indicators has also been studied. The device parameters e.g. oxide thickness, extended gate length, silicon film thickness, and molar concentration of SiGe at the source side are considered. The impact of oxide thickness, extended gate length, the radius of NW, and the concentration of SiGe (molar) at the source side have been analysed on the sensitivity of the O<sub>2</sub> gas sensor. The presented Oxygen gas sensor has an I<sub>ON</sub>/I<sub>OFF</sub> ratio of 3.65 × 10<sup>7</sup> and a subthreshold slope of 58.23 mV/decade.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"16 16\",\"pages\":\"5891 - 5905\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-024-03126-1\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03126-1","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Charge Plasma Based Si1-xGex Sourced Nanowire Tunnel Field Effect Transistor Oxygen Gas Device with Enhanced Sensitivity
In this paper, Charge Plasma Nanowire Tunnel Field Effect Transistor based sensor is proposed for the recognition of Oxygen (O2) gas molecules by means of a Silicon Germanium (Si1-xGex) sourced device abbreviated as SiGe-CP-NW-TFET. The electrical performances of SiGe-CP-NW-TFET have been compared with the conventional Charge Plasma Nanowire Tunnel Field Effect Transistor (CP-NW-TFET). The parameters measured for comparison are ION, IOFF, ION/IOFF, Subthreshold slope (SS), and threshold voltage (Vt). The proposed SiGe-CP-NW-TFET has better electrical performance as compared to Si-CP-NW-TFET. Further, the device characteristics such as electric potential, electric field, charge carriers, and energy band diagram of both the devices have also been compared. The fundamental physics of the proposed sensor is also explored from a comprehensive electrostatic study of the tunnelling junction in the context of gas molecule adsorption. The influence of device constraints of the proposed SiGe-CP-NW-TFET on the electrical performance indicators has also been studied. The device parameters e.g. oxide thickness, extended gate length, silicon film thickness, and molar concentration of SiGe at the source side are considered. The impact of oxide thickness, extended gate length, the radius of NW, and the concentration of SiGe (molar) at the source side have been analysed on the sensitivity of the O2 gas sensor. The presented Oxygen gas sensor has an ION/IOFF ratio of 3.65 × 107 and a subthreshold slope of 58.23 mV/decade.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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