用于场效应晶体管的 n+/n GaAs 结构的电化学剖面分析

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-04 DOI:10.1134/s1063782624030126
D. Yu. Protasov, P. P. Kamesh, K. A. Svit, D. V. Dmitriev, A. A. Makeeva, E. M. Rzaev, K. S. Zhuravlev
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引用次数: 0

摘要

摘要 研究表明,当使用标准电化学剖析配方,通过功率高达 250 W 的卤素灯对 n+/n GaAs 结构进行高强度照射以产生蚀刻所需的空穴时,所得到的电子分布曲线与使用 EDTA 电解液时在 n+ 层中的电子浓度为 4 × 1018 cm-3 时的电子分布曲线不同。造成这种差异的原因是,随着供体杂质硅浓度的增加,砷化镓层的缺陷程度也会增加,从而导致蚀刻坑的出现和发展。为了在 n+/n GaAs 结构中获得足够的电子分布图,有必要将照明限制在 25 W 以下。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors

Abstract

It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of n+/n GaAs structure to generate the holes necessary for etching, the resulting electron distribution profile differs from that set during growth for an electron concentration in the n+-layer > 4 × 1018 cm–3 when using EDTA electrolyte. This difference is due to the appearance and development of etching pits caused by the increase in the degree of defectivity of GaAs layers with increasing concentration of the donor impurity—silicon. To obtain adequate electron distribution profiles in n+/n GaAs structures it is necessary to limit the illumination up to 25 W.

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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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