D. Yu. Protasov, P. P. Kamesh, K. A. Svit, D. V. Dmitriev, A. A. Makeeva, E. M. Rzaev, K. S. Zhuravlev
{"title":"用于场效应晶体管的 n+/n GaAs 结构的电化学剖面分析","authors":"D. Yu. Protasov, P. P. Kamesh, K. A. Svit, D. V. Dmitriev, A. A. Makeeva, E. M. Rzaev, K. S. Zhuravlev","doi":"10.1134/s1063782624030126","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of <i>n</i><sup>+</sup>/<i>n</i> GaAs structure to generate the holes necessary for etching, the resulting electron distribution profile differs from that set during growth for an electron concentration in the <i>n</i><sup>+</sup>-layer > 4 × 10<sup>18</sup> cm<sup>–3</sup> when using EDTA electrolyte. This difference is due to the appearance and development of etching pits caused by the increase in the degree of defectivity of GaAs layers with increasing concentration of the donor impurity—silicon. To obtain adequate electron distribution profiles in <i>n</i><sup>+</sup>/<i>n</i> GaAs structures it is necessary to limit the illumination up to 25 W.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"58 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors\",\"authors\":\"D. Yu. Protasov, P. P. Kamesh, K. A. Svit, D. V. Dmitriev, A. A. Makeeva, E. M. Rzaev, K. S. Zhuravlev\",\"doi\":\"10.1134/s1063782624030126\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of <i>n</i><sup>+</sup>/<i>n</i> GaAs structure to generate the holes necessary for etching, the resulting electron distribution profile differs from that set during growth for an electron concentration in the <i>n</i><sup>+</sup>-layer > 4 × 10<sup>18</sup> cm<sup>–3</sup> when using EDTA electrolyte. This difference is due to the appearance and development of etching pits caused by the increase in the degree of defectivity of GaAs layers with increasing concentration of the donor impurity—silicon. To obtain adequate electron distribution profiles in <i>n</i><sup>+</sup>/<i>n</i> GaAs structures it is necessary to limit the illumination up to 25 W.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"58 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624030126\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624030126","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors
Abstract
It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of n+/n GaAs structure to generate the holes necessary for etching, the resulting electron distribution profile differs from that set during growth for an electron concentration in the n+-layer > 4 × 1018 cm–3 when using EDTA electrolyte. This difference is due to the appearance and development of etching pits caused by the increase in the degree of defectivity of GaAs layers with increasing concentration of the donor impurity—silicon. To obtain adequate electron distribution profiles in n+/n GaAs structures it is necessary to limit the illumination up to 25 W.
期刊介绍:
Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.