纳米碳化硅/硅混合基底上氮化铝薄膜的结构和机械特性研究

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-02 DOI:10.1134/s1063782624020064
A. S. Grashchenko, S. A. Kukushkin, S. S. Sharofidinov
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引用次数: 0

摘要

摘要 对在纳米碳化硅/硅混合基底上生长的氮化铝薄膜的表面结构特征以及硬度和弹性模量参数进行了实验研究。使用原子力显微镜和纳米压痕法研究了硅基纳米碳化硅上取向为 (001)、(011) 和 (111) 的氮化铝层。结果表明,硅衬底的取向对氮化铝薄膜的表面结构和氮化铝表面附近的弹性模量参数有显著影响。测定了生长在硅基纳米碳化硅混合衬底上的氮化铝层的表面粗糙度和结构特征。测量了氮化铝薄膜近表面和薄膜内部的弹性模量参数。通过实验测定了硅基纳米碳化硅上氮化铝薄膜的硬度参数。
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Studies of Structural and Mechanical Properties of AlGaN Thin Films on Nano-SiC/Si Hybrid Substrates

Abstract

An experimental study of the structural characteristics of the surface and the parameters of hardness and elastic modulus of thin AlGaN films grown on nano-SiC/Si hybrid substrates was carried out. AlGaN layers on nano-SiC on Si with orientations (001), (011), and (111) have been investigated using atomic force microscopy and nanoindentation method. It is shown that the orientation of the Si substrate has a significant effect on the surface structure of AlGaN films and the elastic modulus parameter of AlGaN near the surface. The surface roughness and structural characteristics of AlGaN layers grown on nano-SiC on Si hybrid substrates have been determined. The elastic modulus parameters of AlGaN films near the surface and in the film volume have been measured. The hardness parameters of AlGaN thin films on nano-SiC on Si were experimentally determined.

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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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