A. S. Lenshin, Ya. A. Peshkov, O. V. Chernousova, K. A. Barkov, S. V. Kannykin
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引用次数: 0
摘要
摘要 基于 X 射线反射仪和超软 X 射线光谱数据，介绍了利用多级电化学蚀刻模式控制表面孔隙率的机会。介绍了随着近表面层孔隙率指数的增加，多层多孔硅样品的形貌如何发生变化以及氧化程度如何增加。
Influence of Etching Modes on the Morphology and Composition of the Surface of Multilayer Porous Silicon
Abstract
Based on X-ray reflectometry and ultrasoft X-ray spectroscopy data, the opportunity of controlling surface porosity using multi-stage electrochemical etching modes is presented. It is presented how, with an increase in the porosity index of the near-surface layer, the morphology changes and the degree of oxidation of multilayer porous silicon samples increases.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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