近共振激光激发下具有有效反斯托克斯光致发光的过氧化物纳米晶体光诱导加热的特殊性

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-02 DOI:10.1134/s1063782624020131
N. S. Pokryshkin, I. O. Sobina, A. A. Knysh, A. S. Eremina, A. V. Syuy, V. G. Yakunin, V. Yu. Timoshenko
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引用次数: 0

摘要

摘要 这项工作研究了一种基于 CsPbBr3 包晶石纳米晶体的光致发光材料的光学特性。在三种不同的激光激发条件下,对获得的样品进行了激光加热研究:光致发光带出现在斯托克斯区、反斯托克斯区以及与激发线重合。研究发现,在一定波长的激光激发下,这种材料能够主要显示出反斯托克斯(上转换)光致发光。研究人员提出了一种方法,可根据样品在两种不同波长下的吸收、光热和光致发光带位置等数据估算光致发光量子产率。经实验测定,CsPbBr3 纳米晶体的外部光致发光量子产率为 91 ± 4%。这项工作的成果有助于光学冷却技术的发展,并可用于开发基于包晶材料的激光设备。
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Peculiarities of Photoinduced Heating of Perovskite Nanocrystals with Effective Anti-Stokes Photoluminescence under Near-Resonant Laser Excitation

Abstract

The optical properties of a photoluminescent material based on CsPbBr3 perovskite nanocrystals were studied in this work. The laser heating of the obtained samples was studied under three different regimes of laser excitation: the photoluminescence band appears in the Stokes region, in the anti-Stokes region, and coincides with the excitation line. It was found that under laser excitation of a certain wavelength, this material is able to demonstrate predominantly anti-Stokes (upconversion) photoluminescence. A method is proposed for estimating the PL quantum yield from data on absorption, photoheating, and the position of the photoluminescence band of a sample at two different wavelengths. The external photoluminescence quantum yield of CsPbBr3 nanocrystals was experimentally determined to be 91 ± 4%. The results of this work can be useful for the development of optical cooling technology and can be used in the development of laser devices based on perovskite materials.

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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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