HgCdTe 三元合金中浅受体的太赫兹光致发光的温度淬灭

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-08-30 DOI:10.1134/s106378262401007x
D. V. Kozlov, M. S. Zholudev, K. A. Mazhukina, V. Ya. Aleshkin, V. I. Gavrilenko
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引用次数: 0

摘要

摘要 计算了 Hg1 - xCdxTe 在不同温度下空穴通过声子发射俘获到中性汞空位浅激发水平的时间,以及空穴从浅局部水平过渡到价带连续面的时间。由于价带中的载流子随着温度的升高而重新分布,载流子俘获到中性空位的局域水平的时间增加,而重新离子化到连续的时间减少。根据计算结果,提出了一个模型来描述中性汞空位上空穴局部态之间的辐射跃迁所引起的光致发光的温度淬灭。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Temperature Quenching of the Terahertz Photoluminescence of Shallow Acceptors in HgCdTe Ternary Alloy

Abstract

The capture times of holes to the shallow excited levels of neutral mercury vacancy via acoustic phonon emission are calculated for Hg1 – xCdxTe, as well as the transition times of holes from shallow localized levels to the continuum of the valence band at different temperatures. Due to the redistribution of carriers in the valence band with temperature, the time of carrier capture to the localized levels of the neutral vacancy increases, and the time of reionization to the continuum decreases. Based on the calculation results, a model is proposed to describe the temperature quenching of photoluminescence caused by radiative transitions between the localized states of holes on a neutral mercury vacancy.

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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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