D. V. Kozlov, M. S. Zholudev, K. A. Mazhukina, V. Ya. Aleshkin, V. I. Gavrilenko
{"title":"HgCdTe 三元合金中浅受体的太赫兹光致发光的温度淬灭","authors":"D. V. Kozlov, M. S. Zholudev, K. A. Mazhukina, V. Ya. Aleshkin, V. I. Gavrilenko","doi":"10.1134/s106378262401007x","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The capture times of holes to the shallow excited levels of neutral mercury vacancy via acoustic phonon emission are calculated for Hg<sub>1 –</sub> <sub><i>x</i></sub>Cd<sub><i>x</i></sub>Te, as well as the transition times of holes from shallow localized levels to the continuum of the valence band at different temperatures. Due to the redistribution of carriers in the valence band with temperature, the time of carrier capture to the localized levels of the neutral vacancy increases, and the time of reionization to the continuum decreases. Based on the calculation results, a model is proposed to describe the temperature quenching of photoluminescence caused by radiative transitions between the localized states of holes on a neutral mercury vacancy.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"100 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature Quenching of the Terahertz Photoluminescence of Shallow Acceptors in HgCdTe Ternary Alloy\",\"authors\":\"D. V. Kozlov, M. S. Zholudev, K. A. Mazhukina, V. Ya. Aleshkin, V. I. Gavrilenko\",\"doi\":\"10.1134/s106378262401007x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The capture times of holes to the shallow excited levels of neutral mercury vacancy via acoustic phonon emission are calculated for Hg<sub>1 –</sub> <sub><i>x</i></sub>Cd<sub><i>x</i></sub>Te, as well as the transition times of holes from shallow localized levels to the continuum of the valence band at different temperatures. Due to the redistribution of carriers in the valence band with temperature, the time of carrier capture to the localized levels of the neutral vacancy increases, and the time of reionization to the continuum decreases. Based on the calculation results, a model is proposed to describe the temperature quenching of photoluminescence caused by radiative transitions between the localized states of holes on a neutral mercury vacancy.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"100 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s106378262401007x\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s106378262401007x","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Temperature Quenching of the Terahertz Photoluminescence of Shallow Acceptors in HgCdTe Ternary Alloy
Abstract
The capture times of holes to the shallow excited levels of neutral mercury vacancy via acoustic phonon emission are calculated for Hg1 –xCdxTe, as well as the transition times of holes from shallow localized levels to the continuum of the valence band at different temperatures. Due to the redistribution of carriers in the valence band with temperature, the time of carrier capture to the localized levels of the neutral vacancy increases, and the time of reionization to the continuum decreases. Based on the calculation results, a model is proposed to describe the temperature quenching of photoluminescence caused by radiative transitions between the localized states of holes on a neutral mercury vacancy.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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