{"title":"非均匀铁磁性 InGaAs/GaAs/δ-Mn 结构中的相干自旋动力学","authors":"S. V. Zaitsev, V. V. Dremov, V. S. Stolyarov","doi":"10.1134/s1063782624010160","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a δ-Mn-layer separated from the quantum well by a 3–10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of ~100–200 nm is also observed using magnetic force microscopy below the Curie temperature of the δ-Mn-layer.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"45 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures\",\"authors\":\"S. V. Zaitsev, V. V. Dremov, V. S. Stolyarov\",\"doi\":\"10.1134/s1063782624010160\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a δ-Mn-layer separated from the quantum well by a 3–10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of ~100–200 nm is also observed using magnetic force microscopy below the Curie temperature of the δ-Mn-layer.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"45 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624010160\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624010160","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures
Abstract
A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a δ-Mn-layer separated from the quantum well by a 3–10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of ~100–200 nm is also observed using magnetic force microscopy below the Curie temperature of the δ-Mn-layer.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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