基于 Ga2O3 的 10 × 10 太阳盲紫外线探测器阵列和成像特性

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2024-09-01 DOI:10.1088/1674-4926/24030005
Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang
{"title":"基于 Ga2O3 的 10 × 10 太阳盲紫外线探测器阵列和成像特性","authors":"Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang","doi":"10.1088/1674-4926/24030005","DOIUrl":null,"url":null,"abstract":"A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga<sub>2</sub>O<sub>3</sub> film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 10<sup>5</sup>, responsivity (<italic toggle=\"yes\">R</italic>) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 10<sup>3</sup>%, detectivity (<italic toggle=\"yes\">D</italic>\n<sup>*</sup>) of 1.5 × 10<sup>14</sup> Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high <italic toggle=\"yes\">R</italic> of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga<sub>2</sub>O<sub>3</sub> solar-blind UV detectors.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":4.8000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic\",\"authors\":\"Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang\",\"doi\":\"10.1088/1674-4926/24030005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga<sub>2</sub>O<sub>3</sub> film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 10<sup>5</sup>, responsivity (<italic toggle=\\\"yes\\\">R</italic>) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 10<sup>3</sup>%, detectivity (<italic toggle=\\\"yes\\\">D</italic>\\n<sup>*</sup>) of 1.5 × 10<sup>14</sup> Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high <italic toggle=\\\"yes\\\">R</italic> of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga<sub>2</sub>O<sub>3</sub> solar-blind UV detectors.\",\"PeriodicalId\":17038,\"journal\":{\"name\":\"Journal of Semiconductors\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2024-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-4926/24030005\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1674-4926/24030005","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

以原子层沉积法生长的 Ga2O3 薄膜为基础,制备了具有双层导线结构的 10 × 10 太阳盲紫外线(UV)成像阵列。阵列中的这些单检测单元在 3 V 电压下表现出卓越的性能:光暗电流比 (PDCR) 为 5.5 × 105,响应率 (R) 为 4.28 A/W,外部量子效率 (EQE) 为 2.1 × 103%,检测率 (D*) 为 1.5 × 1014 Jones,并且响应时间快。该光电探测器阵列在不同光强和低工作偏压条件下表现出很高的均匀性。该阵列还具有良好的温度稳定性。在 300 °C 下,它仍能清晰成像,并在 5 V 和 1 V 电压下分别保持 34.4 和 6.45 A/W 的高 R 值。这项工作为大规模阵列 Ga2O3 太阳盲紫外探测器提供了新的思路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic
A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga2O3 film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 105, responsivity (R) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 103%, detectivity (D *) of 1.5 × 1014 Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga2O3 solar-blind UV detectors.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
期刊最新文献
Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors 10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic Multiframe-integrated, in-sensor computing using persistent photoconductivity Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1