{"title":"基于 Ga2O3 的 10 × 10 太阳盲紫外线探测器阵列和成像特性","authors":"Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang","doi":"10.1088/1674-4926/24030005","DOIUrl":null,"url":null,"abstract":"A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga<sub>2</sub>O<sub>3</sub> film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 10<sup>5</sup>, responsivity (<italic toggle=\"yes\">R</italic>) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 10<sup>3</sup>%, detectivity (<italic toggle=\"yes\">D</italic>\n<sup>*</sup>) of 1.5 × 10<sup>14</sup> Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high <italic toggle=\"yes\">R</italic> of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga<sub>2</sub>O<sub>3</sub> solar-blind UV detectors.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"229 1","pages":""},"PeriodicalIF":4.8000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"10 × 10 Ga2O3-based solar-blind UV detector array and imaging characteristic\",\"authors\":\"Haifeng Chen, Zhanhang Liu, Yixin Zhang, Feilong Jia, Chenlu Wu, Qin Lu, Xiangtai Liu, Shaoqing Wang\",\"doi\":\"10.1088/1674-4926/24030005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga<sub>2</sub>O<sub>3</sub> film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 10<sup>5</sup>, responsivity (<italic toggle=\\\"yes\\\">R</italic>) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 10<sup>3</sup>%, detectivity (<italic toggle=\\\"yes\\\">D</italic>\\n<sup>*</sup>) of 1.5 × 10<sup>14</sup> Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high <italic toggle=\\\"yes\\\">R</italic> of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga<sub>2</sub>O<sub>3</sub> solar-blind UV detectors.\",\"PeriodicalId\":17038,\"journal\":{\"name\":\"Journal of Semiconductors\",\"volume\":\"229 1\",\"pages\":\"\"},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2024-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-4926/24030005\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1674-4926/24030005","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
摘要
以原子层沉积法生长的 Ga2O3 薄膜为基础，制备了具有双层导线结构的 10 × 10 太阳盲紫外线（UV）成像阵列。阵列中的这些单检测单元在 3 V 电压下表现出卓越的性能：光暗电流比 (PDCR) 为 5.5 × 105，响应率 (R) 为 4.28 A/W，外部量子效率 (EQE) 为 2.1 × 103%，检测率 (D*) 为 1.5 × 1014 Jones，并且响应时间快。该光电探测器阵列在不同光强和低工作偏压条件下表现出很高的均匀性。该阵列还具有良好的温度稳定性。在 300 °C 下，它仍能清晰成像，并在 5 V 和 1 V 电压下分别保持 34.4 和 6.45 A/W 的高 R 值。这项工作为大规模阵列 Ga2O3 太阳盲紫外探测器提供了新的思路。
A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga2O3 film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 105, responsivity (R) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 103%, detectivity (D*) of 1.5 × 1014 Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga2O3 solar-blind UV detectors.
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