研究无直流偏压电介质的镓铌共掺杂钛酸锶钡陶瓷

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2024-08-21 DOI:10.35848/1347-4065/ad690c

Piyush Sapkota, Keito Yagasaki, Ichiro Fujii, Shintaro Ueno, Satoshi Wada

{"title":"研究无直流偏压电介质的镓铌共掺杂钛酸锶钡陶瓷","authors":"Piyush Sapkota, Keito Yagasaki, Ichiro Fujii, Shintaro Ueno, Satoshi Wada","doi":"10.35848/1347-4065/ad690c","DOIUrl":null,"url":null,"abstract":"The Ba0.8Sr0.2Ti1−2<italic toggle=\"yes\">x</italic>\nGa\n<italic toggle=\"yes\">x</italic>\nNb\n<italic toggle=\"yes\">x</italic>\nO3 (0 ≤ <italic toggle=\"yes\">x</italic> ≤ 0.10) ceramics were fabricated and the electrical properties were evaluated regarding DC-bias and temperature characteristics of the dielectric properties. The ceramics with <italic toggle=\"yes\">x</italic> = 0.10 exhibited a stable dielectric constant with a change of–40% within 25 °C–150 °C. The dielectric loss of all the co-doped ceramics was below 2% within 25 °C–200 °C. The Ba0.8Sr0.2Ti1−2<italic toggle=\"yes\">x</italic>\nGa\n<italic toggle=\"yes\">x</italic>\nNb\n<italic toggle=\"yes\">x</italic>\nO3 ceramics showed a higher dielectric constant with a lower DC-bias dependence as compared to previous study on co-doped BaTiO3 ceramics. The Ba0.8Sr0.2Ti0.20Ga0.10Nb0.10O3 ceramics exhibited the best results of DC-bias dependence ≈−24%, dielectric constant at 100 kV cm−1 ≈ 560, and the dielectric constant at 0 kV cm−1 ≈ 735. The better results for the Ga–Nb co-doped BST ceramics might be due to the higher contribution of the ionic polarization in the BST base matrix resulting in a shallower potential energy curve.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"37 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of Ga–Nb co-doped barium strontium titanate ceramics for DC-bias free dielectrics\",\"authors\":\"Piyush Sapkota, Keito Yagasaki, Ichiro Fujii, Shintaro Ueno, Satoshi Wada\",\"doi\":\"10.35848/1347-4065/ad690c\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Ba0.8Sr0.2Ti1−2<italic toggle=\\\"yes\\\">x</italic>\\nGa\\n<italic toggle=\\\"yes\\\">x</italic>\\nNb\\n<italic toggle=\\\"yes\\\">x</italic>\\nO3 (0 ≤ <italic toggle=\\\"yes\\\">x</italic> ≤ 0.10) ceramics were fabricated and the electrical properties were evaluated regarding DC-bias and temperature characteristics of the dielectric properties. The ceramics with <italic toggle=\\\"yes\\\">x</italic> = 0.10 exhibited a stable dielectric constant with a change of–40% within 25 °C–150 °C. The dielectric loss of all the co-doped ceramics was below 2% within 25 °C–200 °C. The Ba0.8Sr0.2Ti1−2<italic toggle=\\\"yes\\\">x</italic>\\nGa\\n<italic toggle=\\\"yes\\\">x</italic>\\nNb\\n<italic toggle=\\\"yes\\\">x</italic>\\nO3 ceramics showed a higher dielectric constant with a lower DC-bias dependence as compared to previous study on co-doped BaTiO3 ceramics. The Ba0.8Sr0.2Ti0.20Ga0.10Nb0.10O3 ceramics exhibited the best results of DC-bias dependence ≈−24%, dielectric constant at 100 kV cm−1 ≈ 560, and the dielectric constant at 0 kV cm−1 ≈ 735. The better results for the Ga–Nb co-doped BST ceramics might be due to the higher contribution of the ionic polarization in the BST base matrix resulting in a shallower potential energy curve.\",\"PeriodicalId\":14741,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":\"37 1\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-08-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad690c\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad690c","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

制备了 Ba0.8Sr0.2Ti1-2xGaxNbxO3（0 ≤ x ≤ 0.10）陶瓷，并评估了介电性能的直流偏压和温度特性。x = 0.10 的陶瓷表现出稳定的介电常数，在 25 ℃-150 ℃之间的变化率为 40%。所有共掺杂陶瓷的介电损耗在 25 ℃-200 ℃ 范围内均低于 2%。与之前对共掺杂 BaTiO3 陶瓷的研究相比，Ba0.8Sr0.2Ti1-2xGaxNbxO3 陶瓷显示出更高的介电常数和更低的直流偏压依赖性。Ba0.8Sr0.2Ti0.20Ga0.10Nb0.10O3陶瓷的直流偏压依赖性≈-24%，100 kV cm-1 时的介电常数≈560，0 kV cm-1 时的介电常数≈735。Ga-Nb 共掺杂 BST 陶瓷的结果更好，可能是因为 BST 基体中离子极化的贡献率更高，导致势能曲线更浅。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Investigation of Ga–Nb co-doped barium strontium titanate ceramics for DC-bias free dielectrics

The Ba_0.8Sr_0.2Ti_1−2xGa_xNb_xO₃ (0 ≤ x ≤ 0.10) ceramics were fabricated and the electrical properties were evaluated regarding DC-bias and temperature characteristics of the dielectric properties. The ceramics with x = 0.10 exhibited a stable dielectric constant with a change of–40% within 25 °C–150 °C. The dielectric loss of all the co-doped ceramics was below 2% within 25 °C–200 °C. The Ba_0.8Sr_0.2Ti_1−2xGa_xNb_xO₃ ceramics showed a higher dielectric constant with a lower DC-bias dependence as compared to previous study on co-doped BaTiO₃ ceramics. The Ba_0.8Sr_0.2Ti_0.20Ga_0.10Nb_0.10O₃ ceramics exhibited the best results of DC-bias dependence ≈−24%, dielectric constant at 100 kV cm⁻¹ ≈ 560, and the dielectric constant at 0 kV cm⁻¹ ≈ 735. The better results for the Ga–Nb co-doped BST ceramics might be due to the higher contribution of the ionic polarization in the BST base matrix resulting in a shallower potential energy curve.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS