Carbon nanotube thin film pn junction diode with high-temperature tolerance using chemical dopants

Chemical doping of carbon nanotubes (CNTs) by adsorption with high-temperature-tolerant molecules is required for the fabrication of various types of electronic devices for their performance maintenance under harsh thermal conditions during the fabrication and operation processes. Here, we demonstrate the fabrication of CNT thin film pn junction diodes using a combination of 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile as a p-dopant and a complex salt of potassium hydroxide and benzo-18-crown-6 ether as an n-dopant. The fabricated devices demonstrated a reasonably stable rectifying behavior, even after heating to 200 °C for 300 min.