High-frequency performance in nanoscale vacuum channel transistors with gate-cathode height difference

Nanoscale vacuum channel transistors (NVCTs) have garnered considerable interest due to their outstanding high frequency characteristics and high reliability, stemming from a distinct carrier transport mechanism compared to solid-state devices. Electrons traverse the nanoscale vacuum channel through scattering-free ballistic transport. However, existing research has predominantly focused on the structural design and optimization of NVCTs, with relatively few studies delving into their high frequency performance. Hence, alongside structural exploration and optimizing, investigating the high-frequency characteristics of NVCTs assumes particular importance. In this study, a novel NVCTs with a gate-cathode height difference structure was proposed and its electrical characteristics were simulated. Simulation results reveal that the presence of gate-cathode height difference effectively enhance the DC characteristics of NVCTs. Moreover, high frequency simulation demonstrate that the proposed device can operate frequency exceeding 1 THz. Whitin the GHz and even terahertz (THz) range, NVCTs exhibits exceptional high frequency properties, including ultrafast response times and minimal distortion. These findings not only offer insights for future structural design and optimization of NVCTs but also underscore the potential of NVCTs in radio frequency and THz applications.