通过有机表面掺杂实现氧化锡薄膜晶体管的载流子调制和有效钝化

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-09-16 DOI:10.1016/j.sse.2024.109005
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引用次数: 0

摘要

掺杂是金属氧化物薄膜晶体管(TFT)调节阈值电压和电荷载流子密度的有效技术。然而,一个显著的缺点是掺杂晶格会破坏微观结构,导致部分电荷载流子迁移率下降。在这项工作中,我们提出了一种表面掺杂技术,通过使用有机掺杂剂分子来改变载流子浓度和钝化器件表面,同时保留沟道层晶格结构。研究表明,以这种方式掺杂的氧化锡(SnO2)TFT 通常具有更好的电气特性,尤其是更高的迁移率和明显更低的阈值电压,而不会对器件的开/关电流比产生负面影响。此外,与原始器件相比,偏压稳定性和长期耐用性也得到了提高。这些发现表明,表面掺杂可用于高性能氧化物半导体器件和电路。
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Carrier modulation and effective passivation of tin oxide thin-film transistors by organic surface doping

Doping is a useful technique for metal oxide thin-film transistors (TFTs) to adjust the threshold voltage and charge carrier density. However, a notable drawback is the disruption of the microstructure caused by doping crystalline lattice, leading to a partial decrease in charge carrier mobility. In this work, we suggest a surface doping technique that modifies the carrier concentration and passivates the device surface while preserving the channel layer lattice structure through the use of organic dopant molecules. It is shown that tin oxide (SnO2) TFTs doped in this manner typically exhibit improved electrical characteristics, particularly greater mobility and a noticeably lower threshold voltage, without negatively affecting the devices on/off current ratio. Furthermore, compared to pristine devices, bias stress stability and long-term durability are also enhanced. These findings suggest that surface doping may find use in high-performance oxide semiconductor devices and circuits.

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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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