Sutapa Badyakar, G. Mohan Rao, Sanjana MN, Sneha C, Monisha D, Likitha Yallegowda, Chandasree Das
{"title":"沉积参数对射频磁控溅射沉积硅氢薄膜的光学和结构特性的影响","authors":"Sutapa Badyakar, G. Mohan Rao, Sanjana MN, Sneha C, Monisha D, Likitha Yallegowda, Chandasree Das","doi":"10.1007/s12633-024-03142-1","DOIUrl":null,"url":null,"abstract":"<p>This study reports the deposition of amorphous hydrogenated silicon thin films by radio frequency magnetron sputtering and their optical characterization by UV–visible spectroscopy and FTIR Spectroscopy. Structural characterization and morphological studies are also performed. It investigates the effect of process factors such as RF power, hydrogen concentration, and deposition temperature on the optical properties of the deposited films. The impact of process parameters like RF power, hydrogen flow, and substrate temperature on the bandgap, refractive index and hydrogen concentration has been studied. The study draws a comparison due to the crucial interactions among RF power, hydrogen flow, and substrate temperature which affect the optical and structural characteristics of a-Si:H thin films. For a particular application, the critical control of these parameters is necessary to provide the requisite film qualities. The films prepared with optimized deposition parameters of RF power of 80 W, hydrogen flow of 5 sccm, and deposition temperature of 150 °C, resulted in a bandgap value of 1.80 eV, refractive index of 2.3, and hydrogen concentration of 5.15% which can be useful as absorber layer in photovoltaic applications. Despite the amorphous nature of all the films, achieving a high-quality a-Si:H thin film requires control over the growth structures, where hydrogen plays a crucial role in passivating the defects.</p>","PeriodicalId":776,"journal":{"name":"Silicon","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of deposition parameters on the optical and structural properties of silicon-hydrogen films deposited by RF magnetron sputtering\",\"authors\":\"Sutapa Badyakar, G. Mohan Rao, Sanjana MN, Sneha C, Monisha D, Likitha Yallegowda, Chandasree Das\",\"doi\":\"10.1007/s12633-024-03142-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This study reports the deposition of amorphous hydrogenated silicon thin films by radio frequency magnetron sputtering and their optical characterization by UV–visible spectroscopy and FTIR Spectroscopy. Structural characterization and morphological studies are also performed. It investigates the effect of process factors such as RF power, hydrogen concentration, and deposition temperature on the optical properties of the deposited films. The impact of process parameters like RF power, hydrogen flow, and substrate temperature on the bandgap, refractive index and hydrogen concentration has been studied. The study draws a comparison due to the crucial interactions among RF power, hydrogen flow, and substrate temperature which affect the optical and structural characteristics of a-Si:H thin films. For a particular application, the critical control of these parameters is necessary to provide the requisite film qualities. The films prepared with optimized deposition parameters of RF power of 80 W, hydrogen flow of 5 sccm, and deposition temperature of 150 °C, resulted in a bandgap value of 1.80 eV, refractive index of 2.3, and hydrogen concentration of 5.15% which can be useful as absorber layer in photovoltaic applications. Despite the amorphous nature of all the films, achieving a high-quality a-Si:H thin film requires control over the growth structures, where hydrogen plays a crucial role in passivating the defects.</p>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1007/s12633-024-03142-1\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s12633-024-03142-1","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Effect of deposition parameters on the optical and structural properties of silicon-hydrogen films deposited by RF magnetron sputtering
This study reports the deposition of amorphous hydrogenated silicon thin films by radio frequency magnetron sputtering and their optical characterization by UV–visible spectroscopy and FTIR Spectroscopy. Structural characterization and morphological studies are also performed. It investigates the effect of process factors such as RF power, hydrogen concentration, and deposition temperature on the optical properties of the deposited films. The impact of process parameters like RF power, hydrogen flow, and substrate temperature on the bandgap, refractive index and hydrogen concentration has been studied. The study draws a comparison due to the crucial interactions among RF power, hydrogen flow, and substrate temperature which affect the optical and structural characteristics of a-Si:H thin films. For a particular application, the critical control of these parameters is necessary to provide the requisite film qualities. The films prepared with optimized deposition parameters of RF power of 80 W, hydrogen flow of 5 sccm, and deposition temperature of 150 °C, resulted in a bandgap value of 1.80 eV, refractive index of 2.3, and hydrogen concentration of 5.15% which can be useful as absorber layer in photovoltaic applications. Despite the amorphous nature of all the films, achieving a high-quality a-Si:H thin film requires control over the growth structures, where hydrogen plays a crucial role in passivating the defects.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.