Wanggao Nie, Jingyi Liu, Lairong Yan, Hao Hu, Ping Lin, Yanbin Zhang, Lingbo Xu, Peng Wang, Xiaoping Wu, Can Cui
{"title":"用于可变波长光电探测的高性能铯硼铍3-xClx/硅异质结光电探测器","authors":"Wanggao Nie, Jingyi Liu, Lairong Yan, Hao Hu, Ping Lin, Yanbin Zhang, Lingbo Xu, Peng Wang, Xiaoping Wu, Can Cui","doi":"10.1007/s10854-024-13502-7","DOIUrl":null,"url":null,"abstract":"<p>All inorganic perovskite CsPbX<sub>3</sub> (X = Br, I, Cl) materials emerge as one of the popular materials in the field of optoelectronic devices due to their outstanding photoelectric properties. Their photoelectric detection performance and stability could be further improved by combining mixed halide perovskites with other semiconductor materials, achieving high-performance variable wavelength photodetectors. In this work, high-quality CsPbBr<sub>3-<i>x</i></sub>Cl<sub><i>x</i></sub> microcrystals were successfully grown on silicon (Si) substrates by chemical vapor deposition (CVD) method. By varying the Br/Cl ratio, the prepared CsPbBr<sub>3-<i>x</i></sub>Cl<sub><i>x</i></sub> heterojunction photodetectors exhibit excellent response time in the scale of microsecond and superior narrowband detection capability in a wide wavelength ranges and excellent environmental stability, achieving the maximum responsivity of 102.6 A/W and detectivity of 5.20 × 10<sup>12</sup> Jones under 7.8µW /cm<sup>2</sup> light illumination intensity. The results suggest an efficient and feasible strategy to the design and improvement of photodetectors for variable wavelength photodetection.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-performance CsPbBr3-xClx/Si heterojunction photodetectors for variable wavelength photodetection\",\"authors\":\"Wanggao Nie, Jingyi Liu, Lairong Yan, Hao Hu, Ping Lin, Yanbin Zhang, Lingbo Xu, Peng Wang, Xiaoping Wu, Can Cui\",\"doi\":\"10.1007/s10854-024-13502-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>All inorganic perovskite CsPbX<sub>3</sub> (X = Br, I, Cl) materials emerge as one of the popular materials in the field of optoelectronic devices due to their outstanding photoelectric properties. Their photoelectric detection performance and stability could be further improved by combining mixed halide perovskites with other semiconductor materials, achieving high-performance variable wavelength photodetectors. In this work, high-quality CsPbBr<sub>3-<i>x</i></sub>Cl<sub><i>x</i></sub> microcrystals were successfully grown on silicon (Si) substrates by chemical vapor deposition (CVD) method. By varying the Br/Cl ratio, the prepared CsPbBr<sub>3-<i>x</i></sub>Cl<sub><i>x</i></sub> heterojunction photodetectors exhibit excellent response time in the scale of microsecond and superior narrowband detection capability in a wide wavelength ranges and excellent environmental stability, achieving the maximum responsivity of 102.6 A/W and detectivity of 5.20 × 10<sup>12</sup> Jones under 7.8µW /cm<sup>2</sup> light illumination intensity. The results suggest an efficient and feasible strategy to the design and improvement of photodetectors for variable wavelength photodetection.</p>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s10854-024-13502-7\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s10854-024-13502-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High-performance CsPbBr3-xClx/Si heterojunction photodetectors for variable wavelength photodetection
All inorganic perovskite CsPbX3 (X = Br, I, Cl) materials emerge as one of the popular materials in the field of optoelectronic devices due to their outstanding photoelectric properties. Their photoelectric detection performance and stability could be further improved by combining mixed halide perovskites with other semiconductor materials, achieving high-performance variable wavelength photodetectors. In this work, high-quality CsPbBr3-xClx microcrystals were successfully grown on silicon (Si) substrates by chemical vapor deposition (CVD) method. By varying the Br/Cl ratio, the prepared CsPbBr3-xClx heterojunction photodetectors exhibit excellent response time in the scale of microsecond and superior narrowband detection capability in a wide wavelength ranges and excellent environmental stability, achieving the maximum responsivity of 102.6 A/W and detectivity of 5.20 × 1012 Jones under 7.8µW /cm2 light illumination intensity. The results suggest an efficient and feasible strategy to the design and improvement of photodetectors for variable wavelength photodetection.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.