基于超多周期 AlGaAs/GaAs 超晶格的有源区太赫兹辐射源

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040055

A. S. Dashkov, L. G. Gerchikov, L. I. Goray, N. A. Kostromin, A. D. Bouravleuv

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引用次数: 0

摘要

摘要本文考虑到生长的超多周期 AlGaAs/GaAs 超晶格，研究了太赫兹辐射源有源区的几种设计。针对所提出的设计，计算了主要器件特性：能带图、增益谱和传输特性。根据计算结果，作者提出了可调谐太赫兹辐射源有源区的最佳设计方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Terahertz Radiation Sources with an Active Region Based on Super-Multiperiod AlGaAs/GaAs Superlattices

Abstract

In this article, several designs of the active region of the THz radiation source are considered, taking into account grown super-multiperiod AlGaAs/GaAs superlattices. For the proposed designs, the principal device characteristics are computed: energy band diagram, gain spectrum, and transport characteristics. Based on the calculation results, the authors proposed an optimal design of the active region of a tunable THz radiation source.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.