碲镉/碲镉锰和碲镉/碲镉镁异质结构的光致发光，其中量子阱被厚势垒隔开

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050051

N. G. Filosofov, G. V. Budkin, V. F. Agekyan, G. Karczewski, A. Yu. Serov, S. Yu. Verbin, I. V. Shtrom, A. N. Reznitsky

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摘要

摘要研究了被 20 nm 厚的碲镉(CdMnTe)和碲镉(CdMgTe)势垒隔开的两个碲镉量子阱(QWs)系统的低温光致发光(PL)和光致激发(PLE)光谱。实验聚勒光谱与考虑了激子效应和内部应变影响的计算结果进行了比较。我们的数据散度没有超出 QW 宽度单层波动的预期。在厚 QW 的 PLE 光谱中发现了一些带，这些带与邻近窄 QW 受激发时厚 QW 的 PL 增加相对应。本文讨论了被厚势垒隔开的 QW 之间的能量传递机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers

Abstract

The low-temperature photoluminescence (PL) and PL excitation (PLE) spectra of two systems of CdTe quantum wells (QWs) separated by CdMnTe and CdMgTe barriers 20 nm thick are studied. The experimental PL spectra are compared with calculations that take into account the exciton effect and the influence of internal strains. The scatter of our data does not exceed that expected for monolayer fluctuations of the QW width. In the PLE spectra of a thick QW, bands were found that correspond to the increase of PL from a thick QW upon excitation of a neighbor narrow QW. The mechanism of energy transfer between QWs separated by thick barriers is discussed.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.