M. B. Smirnov, N. R. Grigorieva, D. V. Pankin, E. M. Roginskii, A. V. Savin
{"title":"超晶格 Si/SiO2 中的极性光学声子","authors":"M. B. Smirnov, N. R. Grigorieva, D. V. Pankin, E. M. Roginskii, A. V. Savin","doi":"10.1134/s1063782624050142","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A study was carried out of the dielectric properties of planar Si/SiO<sub>2</sub> heterostructures, which play an important role in modern electronics. Using the model of dielectric continuum, the spectra of polar phonons in Si/SiO<sub>2</sub> binary superlattices have been studied. Quartz and cristobalite lattices are considered as a structural model of the oxide layer. The dependences of polar optical phonons frequencies and the high-frequency dielectric constant tensor elements on the ratio of layer thicknesses were obtained. The results obtained open up the possibility of using spectroscopic data to characterize the structure of superlattices.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"78 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polar Optical Phonons in Superlattices Si/SiO2\",\"authors\":\"M. B. Smirnov, N. R. Grigorieva, D. V. Pankin, E. M. Roginskii, A. V. Savin\",\"doi\":\"10.1134/s1063782624050142\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>A study was carried out of the dielectric properties of planar Si/SiO<sub>2</sub> heterostructures, which play an important role in modern electronics. Using the model of dielectric continuum, the spectra of polar phonons in Si/SiO<sub>2</sub> binary superlattices have been studied. Quartz and cristobalite lattices are considered as a structural model of the oxide layer. The dependences of polar optical phonons frequencies and the high-frequency dielectric constant tensor elements on the ratio of layer thicknesses were obtained. The results obtained open up the possibility of using spectroscopic data to characterize the structure of superlattices.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"78 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624050142\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624050142","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
A study was carried out of the dielectric properties of planar Si/SiO2 heterostructures, which play an important role in modern electronics. Using the model of dielectric continuum, the spectra of polar phonons in Si/SiO2 binary superlattices have been studied. Quartz and cristobalite lattices are considered as a structural model of the oxide layer. The dependences of polar optical phonons frequencies and the high-frequency dielectric constant tensor elements on the ratio of layer thicknesses were obtained. The results obtained open up the possibility of using spectroscopic data to characterize the structure of superlattices.
期刊介绍:
Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.