基于 InAs1 - xPx 固溶体在 Si(111) 上形成单层和异质结构纳米线

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040080

A. K. Kaveev, V. V. Fedorov, L. N. Dvoretckaya, S. V. Fedina, I. S. Mukhin

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引用次数: 0

摘要

摘要我们研究了基于 InAsP 的纳米线阵列在硅衬底上的生长过程。研究发现，在生长过程中会形成两种结构相：闪锌矿型立方结构和钨矿型六方结构。确定了 InAsP 和硅之间的外延关系：[0001]NWs||[111]Si，[\(11\bar {2}0\)]NWs||[\(1\bar {1}0\)]Si。随着 InAs1 - xPx 固溶体薄片（100 nm）的形成，并保持足够高的 As 流分压（至少 50%），发现径向生长速率降低，并形成了轴向异质结。

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Formation of Single and Heterostructured Nanowires Based on InAs1 – xPx Solid Solutions on Si(111)

Abstract

We study the growth of nanowire arrays based on InAsP on silicon substrates. It was found that during the growth process two structural phases are formed: a cubic structure of the sphalerite type and a hexagonal structure of the wurtzite type. The epitaxial relations between InAsP and Si were determined: [0001]_NWs || [111]_Si, [\(11\bar {2}0\)]_NWs || [\(1\bar {1}0\)]_Si. A decrease of the radial growth rate and the formation of an axial heterojunction were revealed with the formation of thin (<100 nm) segments of the InAs_{1 –} _xP_x solid solution and maintaining a sufficiently high partial pressure of the As flow (at least 50%).

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.