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引用次数: 0
摘要
氧空位（OV）普遍存在于金属氧化物中，在基于氧化物的忆阻器件的开关行为中起着举足轻重的作用。在这项研究中，我们通过实验和理论模拟相结合的方法，研究了 Pt/TaO /Ta2O /TaO /Pt 器件中的氧空位动力学，特别是通过选择不同的初始氧空位曲线并研究其在上述过程中的动力学，重点研究了电脉冲诱导的 RESET 过渡（从低电阻到高电阻）。我们证明，通过选择特定的 OV 曲线，可以调整 RESET 的特征时间尺度。最后，我们表明，通过应用许多（小）连续脉冲诱导渐进式 RESET，可以估算出 OV 电迁移过程中涉及的活化能。我们的研究成果有助于为 OV 工程铺平道路，从而优化开关速度或功耗等与神经形态或内存计算实现高度相关的关键内存数据。
Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this study we address OV dynamics in Pt/TaO /Ta2O /TaO /Pt devices, through a combination of experiments and theoretical simulations, In particular, we focus on the RESET transition (from low to high resistance) induced by the application of electrical pulse(s), by choosing different initial OV profiles and studying their kinetics during the mentioned process. We demonstrate that by selecting specific OV profiles it is possible to tune the characteristic time-scale of the RESET. Finally, we show that the implementation of gradual RESETs, induced by applying many (small) successive pulses, allows estimating the activation energies involved in the OV electromigration process. Our results help paving the way for OV engineering aiming at optimizing key memristive figures such as switching speed or power consumption, which are highly relevant for neuromorphic or in-memory computing implementations.
期刊介绍：
This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.
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