掺杂 Pr3+ 的 Lu2S3 单晶的生长和光谱特性

arXiv - PHYS - Materials Science Pub Date : 2024-09-17 DOI:arxiv-2409.10818

Vojtech Vanecek, Vitezslav Jary, Robert Kral, Lubomir Havlak, Ales Vlk, Romana Kucerkova, Petr Prusa, Jan Barta, Martin Nikl

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引用次数: 0

摘要

我们首次利用微拉伸（mPD）技术成功地从熔体中生长出了Lu2S3（未掺杂和掺杂Pr）单晶体。对卤化物mPD仪器的定制使我们能够生长出熔化温度较高（约1750{deg}C）的棒状（{\O}2 mm，长度约20 mm）Lu2S3晶体。X 射线粉末衍射显示，生长出的晶体呈现出{epsilon}-Lu2S3 晶体结构（{\α}-Al2O3 型，空间群 R-3c）。在光致发光和辐射发光光谱中都观察到了快速的 5d-4f Pr3+ 发光。所介绍的技术是探索大量高熔点硫化物的有效工具，这类材料有望用作闪烁体、有源激光介质和光电元件。

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Growth and Spectroscopic Properties of Pr3+ Doped Lu2S3 SingleCrystals

For the first time Lu2S3 (undoped and Pr-doped) single crystals were successfully grown from melt using micro-pulling-down (mPD) technique. Customization of halide mPD apparatus allowed us to grow rod-shaped ({\O}2 mm and length around 20 mm) crystals of Lu2S3 with high melting temperature (~1750 {\deg}C). X-ray powder diffraction revealed that the grown crystals exhibit the {\epsilon}-Lu2S3 crystal structure ({\alpha}-Al2O3 type, space group R-3c). Optical and scintillation properties of both the undoped and Pr3+ doped Lu2S3 were investigated. Fast 5d-4f Pr3+ luminescence was observed in both photoluminescence and radioluminescence spectra. The presented technology is an effective tool for the exploration of a large family of high-melting sulfides. Such materials show promise for application as scintillators, active laser media, and optoelectronic components.

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arXiv - PHYS - Materials Science

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