{"title":"分子束外延生长的高质量厚度可调砷化镓纳米线交叉层","authors":"","doi":"10.1016/j.vacuum.2024.113657","DOIUrl":null,"url":null,"abstract":"<div><div>InAs nanowire crosses show great potential applications in detection and braiding of Majorana zero modes. Controlled growth of high-quality and diameter tunable InAs nanowire crosses is fundamental for these applications. However, it is still difficult to freely and conveniently adjust the diameter of the free-standing InAs nanowire crosses grown by the conventional growth methods. Here, we report a new technique to realize the growth of high-quality thickness-tunable InAs nanowire crosses by molecular-beam epitaxy. GaAs nanowire crosses were firstly grown on the Si (100) substrates spontaneously by merging the <111>-oriented GaAs nanowires. InAs nanowire crosses were then obtained by <em>in situ</em> growth of InAs shells on the facets of GaAs nanowire cross cores. Detailed scanning and transmission electron microscopic observations and energy dispersive spectrum analyses confirm that the InAs nanowire crosses grown by this manner have continuous and smooth morphology and they are high-quality zinc-blende crystals. More importantly, the InAs shell is grown with the vapor-solid growth mechanism and the thickness of the InAs nanowire crosses can be tuned by varying the InAs shell growth time. Our work provides a valuable method for the controlled growth of thickness-tunable semiconductor nanowire crosses.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":null,"pages":null},"PeriodicalIF":3.8000,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-quality thickness-tunable InAs nanowire crosses grown by molecular-beam epitaxy\",\"authors\":\"\",\"doi\":\"10.1016/j.vacuum.2024.113657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>InAs nanowire crosses show great potential applications in detection and braiding of Majorana zero modes. Controlled growth of high-quality and diameter tunable InAs nanowire crosses is fundamental for these applications. However, it is still difficult to freely and conveniently adjust the diameter of the free-standing InAs nanowire crosses grown by the conventional growth methods. Here, we report a new technique to realize the growth of high-quality thickness-tunable InAs nanowire crosses by molecular-beam epitaxy. GaAs nanowire crosses were firstly grown on the Si (100) substrates spontaneously by merging the <111>-oriented GaAs nanowires. InAs nanowire crosses were then obtained by <em>in situ</em> growth of InAs shells on the facets of GaAs nanowire cross cores. Detailed scanning and transmission electron microscopic observations and energy dispersive spectrum analyses confirm that the InAs nanowire crosses grown by this manner have continuous and smooth morphology and they are high-quality zinc-blende crystals. More importantly, the InAs shell is grown with the vapor-solid growth mechanism and the thickness of the InAs nanowire crosses can be tuned by varying the InAs shell growth time. Our work provides a valuable method for the controlled growth of thickness-tunable semiconductor nanowire crosses.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2024-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X24007036\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X24007036","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
High-quality thickness-tunable InAs nanowire crosses grown by molecular-beam epitaxy
InAs nanowire crosses show great potential applications in detection and braiding of Majorana zero modes. Controlled growth of high-quality and diameter tunable InAs nanowire crosses is fundamental for these applications. However, it is still difficult to freely and conveniently adjust the diameter of the free-standing InAs nanowire crosses grown by the conventional growth methods. Here, we report a new technique to realize the growth of high-quality thickness-tunable InAs nanowire crosses by molecular-beam epitaxy. GaAs nanowire crosses were firstly grown on the Si (100) substrates spontaneously by merging the <111>-oriented GaAs nanowires. InAs nanowire crosses were then obtained by in situ growth of InAs shells on the facets of GaAs nanowire cross cores. Detailed scanning and transmission electron microscopic observations and energy dispersive spectrum analyses confirm that the InAs nanowire crosses grown by this manner have continuous and smooth morphology and they are high-quality zinc-blende crystals. More importantly, the InAs shell is grown with the vapor-solid growth mechanism and the thickness of the InAs nanowire crosses can be tuned by varying the InAs shell growth time. Our work provides a valuable method for the controlled growth of thickness-tunable semiconductor nanowire crosses.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.