Kaicaiayi Kelimu, Yiqun Zhang, Yangyang Zhu, Heping Su, Xi Lu, Li Juan Wang
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Enhanced response and recovery performance of α-hexathiophene sensors for NO2 gas by dual heterogeneous interface
Organic semiconductor gas sensors of α-hexathiophene (α-6 T) films as active layers with dual heterogeneous interface layers of p-hexabiphenyl and pentacene films are prepared by continuous vacuum evaporation method. The enhanced properties of sensors are achieved by modulating the thickness of the α-6 T films. The sensitivity of 1373 %/ ppm and a theoretical low detection limit of 361 ppb are obtained. The sensors demonstrate fast response and recovery properties of 1.05 and 1.51 min for NO2 gas of 20 ppm. The improved performance is attributed to the continuity of the interface layers and high adsorption of island-like growth. This approach is effective to improve organic sensors by introducing dual heterogeneous interface and tuning the growth of active layers.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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