Temperature-Induced Changes in Multifin-Schottky Barrier FinFETs: An Analog/RF Linearity Investigation

In this script, a Gallium Nitride (GaN)-based FinFET structure is proposed with a multi-channel device that is designed and simulated. Here, the 3D-Sentaures TCAD simulator is used to investigate the analog/radio frequency performance and linearity of the MultiFin-Schottky Barrier FinFET with different temperatures of 100–400 K. The proposed device underwent a temperature analysis, where critical parameters include drain current, I_ON/I_OFF ratio, Transconductance (g_m), higher-order terms (g_m2 and g_m3), Gain Bandwidth Product (GBP), Cut-off Frequency (f_T), Transit Time (τ), Transconductance Generation Factor (TGF), Transconductance Frequency Product (TFP), Voltage Input Intercept Point (VIP₂, VIP₃), Input Intercept Point (IIP₃), and Third Order Intermodulation Distortion (IMD₃) is thoroughly examined. Thus, the proposed GaN-based FinFET validates as a strong potential contender for GaN-based analog/RF applications.