采用比较器切换预测技术的 11 位低功耗列并行单斜率 ADC,适用于 CMOS 图像传感器

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-09-28 DOI:10.1016/j.mejo.2024.106427
Xiaolin Shi , Shaomeng Li , Kaiming Nie
{"title":"采用比较器切换预测技术的 11 位低功耗列并行单斜率 ADC,适用于 CMOS 图像传感器","authors":"Xiaolin Shi ,&nbsp;Shaomeng Li ,&nbsp;Kaiming Nie","doi":"10.1016/j.mejo.2024.106427","DOIUrl":null,"url":null,"abstract":"<div><div>This paper proposes an 11-bit low power column-parallel SS ADC with DCDS for CMOS image sensors. The proposed SS ADC reduces the power consumption in three ways. Firstly, using a combination of coarse and fine quantization can reduce power consumption of counter. Secondly, changing the operation state can remove the bit width inverter. Thirdly, the comparator power is reduced by making each column of comparators switch off after the end of the comparison function. The proposed ADC is fabricated in a 110 nm 1P4M CMOS technology and has a DNL of +0.64/−0.54 LSB and an INL of +0.04/−6.7 LSB at a sampling frequency of 29.9 kS/s. The single column SS ADC has the power consumption ranging from 39.6 μW to 74.87 μW. Compared with the conventional SS ADC, the minimum and the maximum reduction of the power consumption are 20.1 % and 43.8 %, respectively. The average power saving is 34.5 %.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An 11-bit low power column-parallel single slope ADC with comparator toggle prediction technique for CMOS image sensor\",\"authors\":\"Xiaolin Shi ,&nbsp;Shaomeng Li ,&nbsp;Kaiming Nie\",\"doi\":\"10.1016/j.mejo.2024.106427\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper proposes an 11-bit low power column-parallel SS ADC with DCDS for CMOS image sensors. The proposed SS ADC reduces the power consumption in three ways. Firstly, using a combination of coarse and fine quantization can reduce power consumption of counter. Secondly, changing the operation state can remove the bit width inverter. Thirdly, the comparator power is reduced by making each column of comparators switch off after the end of the comparison function. The proposed ADC is fabricated in a 110 nm 1P4M CMOS technology and has a DNL of +0.64/−0.54 LSB and an INL of +0.04/−6.7 LSB at a sampling frequency of 29.9 kS/s. The single column SS ADC has the power consumption ranging from 39.6 μW to 74.87 μW. Compared with the conventional SS ADC, the minimum and the maximum reduction of the power consumption are 20.1 % and 43.8 %, respectively. The average power saving is 34.5 %.</div></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-09-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239124001310\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124001310","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文为 CMOS 图像传感器提出了一种带 DCDS 的 11 位低功耗列并行 SS ADC。所提出的 SS ADC 可从三个方面降低功耗。首先,采用粗量化和细量化相结合的方式可以降低计数器的功耗。其次,改变工作状态可以去除位宽反相器。第三,通过在比较功能结束后关闭每列比较器来降低比较器功耗。所提出的 ADC 采用 110 nm 1P4M CMOS 技术制造,在 29.9 kS/s 的采样频率下,DNL 为 +0.64/-0.54 LSB,INL 为 +0.04/-6.7 LSB。单列 SS ADC 的功耗范围为 39.6 μW 至 74.87 μW。与传统的 SS ADC 相比,功耗的最小值和最大值分别降低了 20.1 % 和 43.8 %。平均节电率为 34.5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
An 11-bit low power column-parallel single slope ADC with comparator toggle prediction technique for CMOS image sensor
This paper proposes an 11-bit low power column-parallel SS ADC with DCDS for CMOS image sensors. The proposed SS ADC reduces the power consumption in three ways. Firstly, using a combination of coarse and fine quantization can reduce power consumption of counter. Secondly, changing the operation state can remove the bit width inverter. Thirdly, the comparator power is reduced by making each column of comparators switch off after the end of the comparison function. The proposed ADC is fabricated in a 110 nm 1P4M CMOS technology and has a DNL of +0.64/−0.54 LSB and an INL of +0.04/−6.7 LSB at a sampling frequency of 29.9 kS/s. The single column SS ADC has the power consumption ranging from 39.6 μW to 74.87 μW. Compared with the conventional SS ADC, the minimum and the maximum reduction of the power consumption are 20.1 % and 43.8 %, respectively. The average power saving is 34.5 %.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
期刊最新文献
Thermoreflectance property of gallium nitride 3-D impedance matching network (IMN) based on through-silicon via (TSV) for RF energy harvesting system A new method for temperature field characterization of microsystems based on transient thermal simulation Editorial Board Study on the influence mechanism of gate oxide degradation on DM EMI signals in SiC MOSFET
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1