可在宽温度范围内工作的高功率窄光谱二阶 DBR 激光二极管

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Photonics Technology Letters Pub Date : 2024-09-26 DOI:10.1109/LPT.2024.3468389

Wang Xing;Cuiluan Wang;Zhenwu Liu;Fang Zhao;Lingni Zhu;Suping Liu;Xiaoyu Ma

{"title":"可在宽温度范围内工作的高功率窄光谱二阶 DBR 激光二极管","authors":"Wang Xing;Cuiluan Wang;Zhenwu Liu;Fang Zhao;Lingni Zhu;Suping Liu;Xiaoyu Ma","doi":"10.1109/LPT.2024.3468389","DOIUrl":null,"url":null,"abstract":"Distributed Bragg Reflector laser diode (DBR-LD) plays a crucial role as pump sources due to its wavelength stability. This work firstly presents a \n<inline-formula> <tex-math>$100~\\mu $ </tex-math></inline-formula>\n m wide \n<inline-formula> <tex-math>$2^{\\mathrm {nd}}$ </tex-math></inline-formula>\n-order DBR-LD with surface etched grating. Based on scattering matrix method (SMM) and eigenmode expansion (EME) method, the \n<inline-formula> <tex-math>$2^{\\mathrm {nd}}$ </tex-math></inline-formula>\n-order grating was designed as a period of 288.1 nm and a duty of cycle of 25%. Using ultra violet nanoimprint lithography (UV-NIL) and Inductively Coupled Plasma (ICP) dry etching technique, the grating was firstly fabricated with a depth of \n<inline-formula> <tex-math>$1~\\mu $ </tex-math></inline-formula>\n m from surface. The laser diode achieved a maximum output power of 9.52 W with a full width at half-maximum (FWHM) spectral width of 0.4 nm in CW mode and an average wavelength drift coefficient of 0.0645 nm/°C over a wide temperature range from \n<inline-formula> <tex-math>$- 10~^{\\circ }$ </tex-math></inline-formula>\n C to \n<inline-formula> <tex-math>$100~^{\\circ }$ </tex-math></inline-formula>\n C in pulsed mode, expanded the operating temperature.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 23","pages":"1365-1368"},"PeriodicalIF":2.3000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Power Narrow Spectrum Second-Order DBR Laser Diode Operating Over a Wide Temperature Range\",\"authors\":\"Wang Xing;Cuiluan Wang;Zhenwu Liu;Fang Zhao;Lingni Zhu;Suping Liu;Xiaoyu Ma\",\"doi\":\"10.1109/LPT.2024.3468389\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Distributed Bragg Reflector laser diode (DBR-LD) plays a crucial role as pump sources due to its wavelength stability. This work firstly presents a \\n<inline-formula> <tex-math>$100~\\\\mu $ </tex-math></inline-formula>\\n m wide \\n<inline-formula> <tex-math>$2^{\\\\mathrm {nd}}$ </tex-math></inline-formula>\\n-order DBR-LD with surface etched grating. Based on scattering matrix method (SMM) and eigenmode expansion (EME) method, the \\n<inline-formula> <tex-math>$2^{\\\\mathrm {nd}}$ </tex-math></inline-formula>\\n-order grating was designed as a period of 288.1 nm and a duty of cycle of 25%. Using ultra violet nanoimprint lithography (UV-NIL) and Inductively Coupled Plasma (ICP) dry etching technique, the grating was firstly fabricated with a depth of \\n<inline-formula> <tex-math>$1~\\\\mu $ </tex-math></inline-formula>\\n m from surface. The laser diode achieved a maximum output power of 9.52 W with a full width at half-maximum (FWHM) spectral width of 0.4 nm in CW mode and an average wavelength drift coefficient of 0.0645 nm/°C over a wide temperature range from \\n<inline-formula> <tex-math>$- 10~^{\\\\circ }$ </tex-math></inline-formula>\\n C to \\n<inline-formula> <tex-math>$100~^{\\\\circ }$ </tex-math></inline-formula>\\n C in pulsed mode, expanded the operating temperature.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":\"36 23\",\"pages\":\"1365-1368\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10695091/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10695091/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

分布式布拉格反射激光二极管（DBR-LD）因其波长稳定而在泵浦源中发挥着重要作用。本研究首次提出了一种100~\mu $ m宽的2^{\mathrm {nd}}$ -阶带表面蚀刻光栅的DBR-LD。基于散射矩阵法（SMM）和特征模扩展法（EME），设计了周期为 288.1 nm、占空比为 25% 的 2^{mathrm {nd}}$ - 阶光栅。利用紫外纳米压印光刻（UV-NIL）和电感耦合等离子体（ICP）干蚀刻技术，首先制作出了距离表面深度为 1~\mu $ m 的光栅。激光二极管的最大输出功率为 9.52 W，在 CW 模式下，半最大全宽（FWHM）光谱宽度为 0.4 nm，在脉冲模式下，平均波长漂移系数为 0.0645 nm/°C，工作温度范围从 $- 10~^{\circ }$ C 到 $100~^{\circ }$ C。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

High Power Narrow Spectrum Second-Order DBR Laser Diode Operating Over a Wide Temperature Range

Distributed Bragg Reflector laser diode (DBR-LD) plays a crucial role as pump sources due to its wavelength stability. This work firstly presents a

$100~\mu $

m wide

$2^{\mathrm {nd}}$

-order DBR-LD with surface etched grating. Based on scattering matrix method (SMM) and eigenmode expansion (EME) method, the

$2^{\mathrm {nd}}$

-order grating was designed as a period of 288.1 nm and a duty of cycle of 25%. Using ultra violet nanoimprint lithography (UV-NIL) and Inductively Coupled Plasma (ICP) dry etching technique, the grating was firstly fabricated with a depth of

$1~\mu $

m from surface. The laser diode achieved a maximum output power of 9.52 W with a full width at half-maximum (FWHM) spectral width of 0.4 nm in CW mode and an average wavelength drift coefficient of 0.0645 nm/°C over a wide temperature range from

$- 10~^{\circ }$

C to

$100~^{\circ }$

C in pulsed mode, expanded the operating temperature.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.