Nur Aishah Aminah Mohd Amin, Suhana Mohd Said, Nik Muhd Jazli Nik Ibrahim, Megat Muhammad Ikhsan Megat Hasnan, Mohd Faiz Mohd Salleh, Amalina Muhammad Afifi
{"title":"基于结构、光学和电学特性的 8、10 和 12 碳烷基链钴(II)自旋交叉 (SCO) 复合物溶液相和薄膜的比较分析","authors":"Nur Aishah Aminah Mohd Amin, Suhana Mohd Said, Nik Muhd Jazli Nik Ibrahim, Megat Muhammad Ikhsan Megat Hasnan, Mohd Faiz Mohd Salleh, Amalina Muhammad Afifi","doi":"10.1007/s10854-024-13656-4","DOIUrl":null,"url":null,"abstract":"<div><p>Spin crossover (SCO) materials are compounds capable of switching between high-spin and low-spin states in response to external stimuli such as temperature. In this work, a series of cobalt(II) SCO complexes [Co₂(CH₃COO)₄(LC<sub>n</sub>)₂] (L = ligand, <i>n</i> = 8, 10, 12) were explored as potential materials for optoelectronic and thermo-electrochemical (TEC) devices. Previous efforts focused on solution-phase SCO complexes for TEC applications due to their high conductivity values but faced challenges such as solvent evaporation and instability. This study presents: (i) a comparative analysis of the physical properties between solution and thin film forms of these complexes, and (ii) optimisation of these properties by understanding the correlation between the molecular structure of the SCO complexes and their physical characteristics. Compared to their solution counterparts, the complexes in thin film formats demonstrated enhanced structural and optical stability. The thin films exhibited higher bandgap values (2.75–2.83 eV), making them suitable for optoelectronic applications. These films also showed more stable spin transitions, enhancing the overall system stability. The complex with the longest alkyl chain (12-carbon) showed higher solubility in solvents, allowing for more uniform and higher quality film. The longer alkyl chain in thin films showed a decrease in conductivity, suggesting enhanced charge trapping, making them promising for storage and memory devices. Conversely, in the solution phase, the longer alkyl chain showed an increase in ionic conductivity, beneficial for TEC applications. This study provides a systematic approach to designing SCO complexes for optimal performance in various electronic and electrochemical applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative analysis between solution-phase and thin films of cobalt(II) spin crossover (SCO) complexes with 8, 10, 12-carbon alkyl chains based on structural, optical and electrical properties\",\"authors\":\"Nur Aishah Aminah Mohd Amin, Suhana Mohd Said, Nik Muhd Jazli Nik Ibrahim, Megat Muhammad Ikhsan Megat Hasnan, Mohd Faiz Mohd Salleh, Amalina Muhammad Afifi\",\"doi\":\"10.1007/s10854-024-13656-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Spin crossover (SCO) materials are compounds capable of switching between high-spin and low-spin states in response to external stimuli such as temperature. In this work, a series of cobalt(II) SCO complexes [Co₂(CH₃COO)₄(LC<sub>n</sub>)₂] (L = ligand, <i>n</i> = 8, 10, 12) were explored as potential materials for optoelectronic and thermo-electrochemical (TEC) devices. Previous efforts focused on solution-phase SCO complexes for TEC applications due to their high conductivity values but faced challenges such as solvent evaporation and instability. This study presents: (i) a comparative analysis of the physical properties between solution and thin film forms of these complexes, and (ii) optimisation of these properties by understanding the correlation between the molecular structure of the SCO complexes and their physical characteristics. Compared to their solution counterparts, the complexes in thin film formats demonstrated enhanced structural and optical stability. The thin films exhibited higher bandgap values (2.75–2.83 eV), making them suitable for optoelectronic applications. These films also showed more stable spin transitions, enhancing the overall system stability. The complex with the longest alkyl chain (12-carbon) showed higher solubility in solvents, allowing for more uniform and higher quality film. The longer alkyl chain in thin films showed a decrease in conductivity, suggesting enhanced charge trapping, making them promising for storage and memory devices. Conversely, in the solution phase, the longer alkyl chain showed an increase in ionic conductivity, beneficial for TEC applications. This study provides a systematic approach to designing SCO complexes for optimal performance in various electronic and electrochemical applications.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13656-4\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13656-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Comparative analysis between solution-phase and thin films of cobalt(II) spin crossover (SCO) complexes with 8, 10, 12-carbon alkyl chains based on structural, optical and electrical properties
Spin crossover (SCO) materials are compounds capable of switching between high-spin and low-spin states in response to external stimuli such as temperature. In this work, a series of cobalt(II) SCO complexes [Co₂(CH₃COO)₄(LCn)₂] (L = ligand, n = 8, 10, 12) were explored as potential materials for optoelectronic and thermo-electrochemical (TEC) devices. Previous efforts focused on solution-phase SCO complexes for TEC applications due to their high conductivity values but faced challenges such as solvent evaporation and instability. This study presents: (i) a comparative analysis of the physical properties between solution and thin film forms of these complexes, and (ii) optimisation of these properties by understanding the correlation between the molecular structure of the SCO complexes and their physical characteristics. Compared to their solution counterparts, the complexes in thin film formats demonstrated enhanced structural and optical stability. The thin films exhibited higher bandgap values (2.75–2.83 eV), making them suitable for optoelectronic applications. These films also showed more stable spin transitions, enhancing the overall system stability. The complex with the longest alkyl chain (12-carbon) showed higher solubility in solvents, allowing for more uniform and higher quality film. The longer alkyl chain in thin films showed a decrease in conductivity, suggesting enhanced charge trapping, making them promising for storage and memory devices. Conversely, in the solution phase, the longer alkyl chain showed an increase in ionic conductivity, beneficial for TEC applications. This study provides a systematic approach to designing SCO complexes for optimal performance in various electronic and electrochemical applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.