{"title":"优化元素组成,实现共晶金锡焊料","authors":"Chupong Pakpum, Kanokwan Kanchiang","doi":"10.1007/s10854-024-13710-1","DOIUrl":null,"url":null,"abstract":"<div><p>The loss of some elements during the bonding process causes the overall composition to deviate from the eutectic point, affecting the adhesion’s strength. Experiments were conducted to find suitable conditions via percentage of film thickness ratio (Au thickness/(Au + Sn) thickness) in the 48.72–60.13% range, which corresponds to %Sn in the range of 29–40at% on the binary Au–Sn (Au-rich side) phase diagram. The squeeze-out phenomenon of Sn occurs during heat and pressure between two workpieces that are being welded together and because this element has a lower melting temperature than Au, this results in the preparation of Sn equivalent to 33at%, corresponding to a percentage film thickness ratio of 56%, to obtain the eutectic condition at Sn 29at% when the bonding process is completed. Specimens were prepared with focus ion beam for analysis elements to indicate the phase formation of IMCs and their distribution. The workpiece was prepared with FIB-lamella to study the nanometer structure with the transmission electron microscopy technique and identify the type of crystals formed by the selected area electron diffraction analysis. The adhesion strength was evaluated with all experimental conditions using a shear tester. It was found that the conditions of eutectic provide the highest adhesion strength at 285.20 ± 10.62 MPa.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Elemental composition optimization to achieve eutectic Au–Sn solder\",\"authors\":\"Chupong Pakpum, Kanokwan Kanchiang\",\"doi\":\"10.1007/s10854-024-13710-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The loss of some elements during the bonding process causes the overall composition to deviate from the eutectic point, affecting the adhesion’s strength. Experiments were conducted to find suitable conditions via percentage of film thickness ratio (Au thickness/(Au + Sn) thickness) in the 48.72–60.13% range, which corresponds to %Sn in the range of 29–40at% on the binary Au–Sn (Au-rich side) phase diagram. The squeeze-out phenomenon of Sn occurs during heat and pressure between two workpieces that are being welded together and because this element has a lower melting temperature than Au, this results in the preparation of Sn equivalent to 33at%, corresponding to a percentage film thickness ratio of 56%, to obtain the eutectic condition at Sn 29at% when the bonding process is completed. Specimens were prepared with focus ion beam for analysis elements to indicate the phase formation of IMCs and their distribution. The workpiece was prepared with FIB-lamella to study the nanometer structure with the transmission electron microscopy technique and identify the type of crystals formed by the selected area electron diffraction analysis. The adhesion strength was evaluated with all experimental conditions using a shear tester. It was found that the conditions of eutectic provide the highest adhesion strength at 285.20 ± 10.62 MPa.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13710-1\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13710-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Elemental composition optimization to achieve eutectic Au–Sn solder
The loss of some elements during the bonding process causes the overall composition to deviate from the eutectic point, affecting the adhesion’s strength. Experiments were conducted to find suitable conditions via percentage of film thickness ratio (Au thickness/(Au + Sn) thickness) in the 48.72–60.13% range, which corresponds to %Sn in the range of 29–40at% on the binary Au–Sn (Au-rich side) phase diagram. The squeeze-out phenomenon of Sn occurs during heat and pressure between two workpieces that are being welded together and because this element has a lower melting temperature than Au, this results in the preparation of Sn equivalent to 33at%, corresponding to a percentage film thickness ratio of 56%, to obtain the eutectic condition at Sn 29at% when the bonding process is completed. Specimens were prepared with focus ion beam for analysis elements to indicate the phase formation of IMCs and their distribution. The workpiece was prepared with FIB-lamella to study the nanometer structure with the transmission electron microscopy technique and identify the type of crystals formed by the selected area electron diffraction analysis. The adhesion strength was evaluated with all experimental conditions using a shear tester. It was found that the conditions of eutectic provide the highest adhesion strength at 285.20 ± 10.62 MPa.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.