基于三端氧化物电阻开关器件的非易失性逻辑门和全加法器

IF 2.6 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronic Engineering Pub Date : 2024-10-21 DOI:10.1016/j.mee.2024.112280
Jifang Cao , Jiabao Ye , Tao Wang , Yong Ding , Ran Cheng , Dong Liu , Bing Chen
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引用次数: 0

摘要

当今的片上计算能力受到冯-诺依曼瓶颈造成的 "内存墙 "和 "电源墙 "的限制。作为一种潜在的解决方案,这项研究开发了基于场效应三端氧化物电阻开关存储器件(3T-RRAM)的非易失性逻辑门。该研究提出了一个使用多项式控制源 (PCS) 的紧凑型电路模型,用于描述所制造的 3T-RRAM 的行为。3T-RRAM 可被视为用于构建非易失性逻辑门的非易失性传输门。此外,仅使用 8 个 3T-RRAM (4 个非易失性逻辑门)就设计出了具有输入存储功能的全加法器,并提出了基于 3T-RRAM 逻辑门阵列的二值化神经网络 (BNN)。这证明了非易失性逻辑门在内存计算应用中的巨大潜力。
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Nonvolatile logic gate and full adder based on tri-terminal oxide resistive switching devices
Today's on-chip computing power is constrained by the “memory wall” and “power wall” caused by the Von Neumann bottleneck. As a potential solution, this work has developed nonvolatile logic gates based on field-effect tri-terminal oxide resistive switching memory devices (3T-RRAM). A compact circuit model using a polynomial control source (PCS) is proposed to describe the behavior of the fabricated 3T-RRAM. The 3T-RRAM can be regarded as a nonvolatile transmission gate for constructing nonvolatile logic gates. Additionally, a full adder with input storage functionality has been designed using only eight 3T-RRAMs (four nonvolatile logic gates), and a binarized neural network (BNN) based on 3T-RRAM logic gate arrays has been proposed. This demonstrates the great potential of nonvolatile logic gates in computing-in-memory applications.
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来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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