Yanrong Pei , Wenchang Li , Jian Liu , Tianyi Zhang
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A new method for temperature field characterization of microsystems based on transient thermal simulation
Microsystems face challenges such as high heat flux density and localized hot spots in the temperature field, significantly impacting their thermal reliability. Accurately and comprehensively characterizing the temperature field is a challenging problem in current research. We present a general high-order finite difference (GHOFD) algorithm for the high-accuracy numerical solution of the two-dimensional transient heat conduction equations (THCEs). The 10th-order GHOFD algorithm is accurate up to 10−7 °C. Secondly, we present a viable approach for characterizing microsystems' steady-state and transient heat conduction mechanisms. We introduce two new characterization parameters: the gradient modulus and the heat flux direction factor (HFDF). The gradient modulus can more clearly characterize the magnitude of the gradient vector and quantitatively analyze the spatial position of the temperature field change in the microsystem. The HFDF can dynamically display the heat conduction process in the temperature field. Finally, using temperature field simulation and microsystem characterization, we have validated the effectiveness of the proposed method and new parameters.
期刊介绍：
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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