用于 BPSK 调制 RFID 标签的 920MHz、160μW、25dB 增益负阻反射放大器

IF 2.3 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE journal of radio frequency identification Pub Date : 2024-10-16 DOI:10.1109/JRFID.2024.3481423

Takahiro Tsuji;Yoshiki Miyazaki;Tadashi Maeda

{"title":"用于 BPSK 调制 RFID 标签的 920MHz、160μW、25dB 增益负阻反射放大器","authors":"Takahiro Tsuji;Yoshiki Miyazaki;Tadashi Maeda","doi":"10.1109/JRFID.2024.3481423","DOIUrl":null,"url":null,"abstract":"This paper describes a negative resistance reflection amplifier for BPSK modulation RFID tag. The amplifier has a cascode configuration with a source degeneration capacitor and resistor. The capacitor with 1-bit binary capacitance controlled by a FET switch can realize two different impedances with negative resistance in which those impedance phase difference is close to 180 degrees. The fabricated amplifier using HEMT devices achieves 25 dB gain with the phase difference of \n<inline-formula> <tex-math>$180~\\pm ~10$ </tex-math></inline-formula>\n degrees between reflection coefficient point \n<inline-formula> <tex-math>$\\boldsymbol {\\varGamma }_{0}$ </tex-math></inline-formula>\n and \n<inline-formula> <tex-math>$\\varGamma _{1}$ </tex-math></inline-formula>\n for BPSK modulation with a power consumption of \n<inline-formula> <tex-math>$160~\\mu $ </tex-math></inline-formula>\n W. Friis transmission equation suggests that the tag incorporating our amplifier could extend the up-link communication range up to 40m.","PeriodicalId":73291,"journal":{"name":"IEEE journal of radio frequency identification","volume":"8 ","pages":"811-820"},"PeriodicalIF":2.3000,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 920-MHz, 160-μW, 25-dB Gain Negative Resistance Reflection Amplifier for BPSK Modulation RFID Tag\",\"authors\":\"Takahiro Tsuji;Yoshiki Miyazaki;Tadashi Maeda\",\"doi\":\"10.1109/JRFID.2024.3481423\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a negative resistance reflection amplifier for BPSK modulation RFID tag. The amplifier has a cascode configuration with a source degeneration capacitor and resistor. The capacitor with 1-bit binary capacitance controlled by a FET switch can realize two different impedances with negative resistance in which those impedance phase difference is close to 180 degrees. The fabricated amplifier using HEMT devices achieves 25 dB gain with the phase difference of \\n<inline-formula> <tex-math>$180~\\\\pm ~10$ </tex-math></inline-formula>\\n degrees between reflection coefficient point \\n<inline-formula> <tex-math>$\\\\boldsymbol {\\\\varGamma }_{0}$ </tex-math></inline-formula>\\n and \\n<inline-formula> <tex-math>$\\\\varGamma _{1}$ </tex-math></inline-formula>\\n for BPSK modulation with a power consumption of \\n<inline-formula> <tex-math>$160~\\\\mu $ </tex-math></inline-formula>\\n W. Friis transmission equation suggests that the tag incorporating our amplifier could extend the up-link communication range up to 40m.\",\"PeriodicalId\":73291,\"journal\":{\"name\":\"IEEE journal of radio frequency identification\",\"volume\":\"8 \",\"pages\":\"811-820\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE journal of radio frequency identification\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10720219/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE journal of radio frequency identification","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10720219/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了一种用于 BPSK 调制 RFID 标签的负阻反射放大器。该放大器采用级联配置，包含一个源变容电容器和一个电阻器。电容器具有 1 位二进制电容，由场效应管开关控制，可实现两个不同的负阻阻抗，其中阻抗相位差接近 180 度。使用 HEMT 器件制造的放大器在 BPSK 调制时实现了 25 dB 增益，反射系数点 $\boldsymbol {\varGamma }_{0}$ 和 $\varGamma _{1}$ 之间的相位差为 180~pm ~10$ 度，功耗为 160~\mu $ W。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A 920-MHz, 160-μW, 25-dB Gain Negative Resistance Reflection Amplifier for BPSK Modulation RFID Tag

This paper describes a negative resistance reflection amplifier for BPSK modulation RFID tag. The amplifier has a cascode configuration with a source degeneration capacitor and resistor. The capacitor with 1-bit binary capacitance controlled by a FET switch can realize two different impedances with negative resistance in which those impedance phase difference is close to 180 degrees. The fabricated amplifier using HEMT devices achieves 25 dB gain with the phase difference of

$180~\pm ~10$

degrees between reflection coefficient point

$\boldsymbol {\varGamma }_{0}$

and

$\varGamma _{1}$

for BPSK modulation with a power consumption of

$160~\mu $

W. Friis transmission equation suggests that the tag incorporating our amplifier could extend the up-link communication range up to 40m.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊